DSPIC30F2010-20I/MM Microchip Technology, DSPIC30F2010-20I/MM Datasheet - Page 156

• Manufacturer Part Number: DSPIC30F2010-20I/MM
• Description: IC DSPIC MCU/DSP 12K 28QFN
• Manufacturer: Microchip Technology
• Series: dsPIC™ 30Fr

Specifications of DSPIC30F2010-20I/MM

• Core Processor: dsPIC
• Core Size: 16-Bit
• Speed: 20 MIPS
• Connectivity: I²C, SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, Motor Control PWM, QEI, POR, PWM, WDT
• Number Of I /o: 20
• Program Memory Size: 12KB (4K x 24)
• Program Memory Type: FLASH
• Eeprom Size: 1K x 8
• Ram Size: 512 x 8
• Voltage - Supply (vcc/vdd): 2.5 V ~ 5.5 V
• Data Converters: A/D 6x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 28-QFN
• Core Frequency: 40MHz
• Core Supply Voltage: 5.5V
• Embedded Interface Type: I2C, SPI, UART
• No. Of I/o's: 20
• Flash Memory Size: 12KB
• Supply Voltage Range: 2.5V To 5.5V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• For Use With: AC164322 - MODULE SOCKET MPLAB PM3 28/44QFN
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: DSPIC30F2010-20I/MMG; DSPIC30F201020IMM; DSPIC30F201020IMM

dsPIC30F2010
TABLE 22-10: ELECTRICAL CHARACTERISTICS: BOR
TABLE 22-11: DC CHARACTERISTICS: PROGRAM AND EEPROM
DS70118H-page 156
DC CHARACTERISTICS
BO10
BO15
Note 1:
DC CHARACTERISTICS
D120
D121
D122
D123
D124
D130
D131
D132
D133
D134
D135
D136
D137
D138
Note 1:
Param
Param
No.
No.
2:
3:
2:
E
V
T
T
I
E
V
V
V
T
T
T
I
I
Symbol
DEW
PEW
EB
Data in “Typ” column is at 5V, 25°C unless otherwise stated. Parameters are for design guidance only and
are not tested.
These parameters are characterized but not tested in manufacturing.
11 values not in usable operating range.
EB
Data in “Typ” column is at 5V, 25°C unless otherwise stated.
These parameters are characterized but not tested in manufacturing.
RETD
RETD
DEW
EB
PEW
D
DRW
P
PR
PEW
V
V
Symbol
BOR
BHYS
Data EEPROM Memory
Byte Endurance
V
Erase/Write Cycle Time
Characteristic Retention
I
Program Flash Memory
Cell Endurance
V
V
V
Erase/Write Cycle Time
Characteristic Retention
ICSP Block Erase Time
I
I
DD
DD
DD
DD
DD
DD
DD
BOR Voltage
V
low
During Programming
During Programming
During Programming
for Read/Write
for Read
for Bulk Erase
for Erase/Write
DD
Characteristic
transition high to
Characteristic
(2)
on
(2)
(2)
Standard Operating Conditions: 2.5V to 5.5V
(unless otherwise stated)
Operating temperature
BORV = 11
BORV = 10
BORV = 01
BORV = 00
Standard Operating Conditions: 2.5V to 5.5V
(unless otherwise stated)
Operating temperature
100K
V
V
Min
10K
4.5
3.0
40
40
—
—
—
—
—
MIN
MIN
1
Typ
100K
(3)
100
100
1M
10
10
10
—
—
—
—
—
2
4
(1)
4.58
Min
2.6
4.1
—
—
Max
5.5
5.5
5.5
5.5
30
30
30
—
—
—
—
—
—
2
Typ
-40°C ≤ T
-40°C ≤ T
—
—
—
—
5
-40°C ≤ T
-40°C ≤ T
Units
(1)
Year Provided no other specifications
Year Provided no other specifications
E/W
E/W
mA
mA
mA
ms
ms
ms
V
V
V
V
Max
2.71
4.73
A
A
4.4
—
—
-40°C ≤ T
Using EECON to read/write
V
voltage
are violated
Row Erase
-40°C ≤ T
V
voltage
are violated
Row Erase
Bulk Erase
≤ +85°C for Industrial
≤ +125°C for Extended
MIN
MIN
A
A
≤ +85°C for Industrial
≤ +125°C for Extended
© 2008 Microchip Technology Inc.
= Minimum operating
= Minimum operating
Units
mV
V
V
V
V
A
A
Conditions
≤ +85°C
≤ +85°C
Not in operating
range
Conditions