DSPIC30F2011-20I/SO Microchip Technology, DSPIC30F2011-20I/SO Datasheet - Page 158
DSPIC30F2011-20I/SO
Manufacturer Part Number
DSPIC30F2011-20I/SO
Description
IC DSPIC MCU/DSP 12K 18SOIC
Manufacturer
Microchip Technology
Series
dsPIC™ 30Fr
Datasheets
1.DSPIC30F2011-20ISO.pdf
(66 pages)
2.DSPIC30F2011-20ISO.pdf
(210 pages)
3.DSPIC30F2011-20ISO.pdf
(14 pages)
4.DSPIC30F2011-20ISO.pdf
(6 pages)
5.DSPIC30F2011-20ISO.pdf
(18 pages)
6.DSPIC30F2011-20ISO.pdf
(206 pages)
Specifications of DSPIC30F2011-20I/SO
Core Processor
dsPIC
Core Size
16-Bit
Speed
20 MIPS
Connectivity
I²C, SPI, UART/USART
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
12
Program Memory Size
12KB (4K x 24)
Program Memory Type
FLASH
Ram Size
1K x 8
Voltage - Supply (vcc/vdd)
2.5 V ~ 5.5 V
Data Converters
A/D 8x12b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
18-SOIC (7.5mm Width)
Core Frequency
40MHz
Embedded Interface Type
I2C, SPI, UART
No. Of I/o's
12
Flash Memory Size
12KB
Supply Voltage Range
2.5V To 5.5V
Operating Temperature Range
-40°C To +85°C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
For Use With
XLT18SO-1 - SOCKET TRANSITION 18SOIC 300MILAC30F005 - MODULE SCKT DSPIC30F 18DIP/SOIC
Eeprom Size
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
DSPIC30F201120ISO
- DSPIC30F2011-20ISO PDF datasheet
- DSPIC30F2011-20ISO PDF datasheet #2
- DSPIC30F2011-20ISO PDF datasheet #3
- DSPIC30F2011-20ISO PDF datasheet #4
- DSPIC30F2011-20ISO PDF datasheet #5
- DSPIC30F2011-20ISO PDF datasheet #6
- Current page: 158 of 206
- Download datasheet (4Mb)
dsPIC30F2011/2012/3012/3013
TABLE 20-11: ELECTRICAL CHARACTERISTICS: BOR
TABLE 20-12: DC CHARACTERISTICS: PROGRAM AND EEPROM
DS70139C-page 156
DC CHARACTERISTICS
BO10
BO15
Note 1:
DC CHARACTERISTICS
D120
D121
D122
D123
D124
D130
D131
D132
D133
D134
D135
D136
D137
D138
Note 1:
Param
Param
No.
No.
2:
3:
2:
E
V
T
T
I
E
V
V
V
T
T
T
I
I
Symbol
DEW
PEW
EB
Data in “Typ” column is at 5V, 25°C unless otherwise stated. Parameters are for design guidance only and
are not tested.
These parameters are characterized but not tested in manufacturing.
00 values not in usable operating range.
EB
Data in “Typ” column is at 5V, 25°C unless otherwise stated.
These parameters are characterized but not tested in manufacturing.
RETD
RETD
D
DRW
DEW
P
PR
EB
PEW
PEW
V
V
Symbol
BOR
BHYS
Data EEPROM Memory
Byte Endurance
V
Erase/Write Cycle Time
Characteristic Retention
I
Program Flash Memory
Cell Endurance
V
V
V
Erase/Write Cycle Time
Characteristic Retention
ICSP Block Erase Time
I
I
DD
DD
DD
DD
DD
DD
DD
BOR Voltage
V
low
During Programming
During Programming
During Programming
for Read/Write
for Read
for Bulk Erase
for Erase/Write
DD
Characteristic
transition high to
Characteristic
(2)
on
(2)
(2)
Standard Operating Conditions: 2.5V to 5.5V
(unless otherwise stated)
Operating temperature
BORV = 00
BORV = 01
BORV = 10
BORV = 11
Standard Operating Conditions: 2.5V to 5.5V
(unless otherwise stated)
Operating temperature
Preliminary
100K
V
V
Min
10K
4.5
3.0
—
40
—
—
40
—
—
—
MIN
MIN
Typ
100K
(3)
100
100
1M
10
10
10
—
—
—
—
2
2
4
(1)
Min
2.7
4.2
4.5
—
—
Max
5.5
5.5
5.5
5.5
30
30
30
—
—
—
—
—
—
—
Typ
-40°C T
-40°C T
—
—
—
—
5
-40°C
-40°C
Units
(1)
E/W
Year Provided no other specifications
E/W
Year Provided no other specifications
mA
mA
mA
ms
ms
ms
V
V
V
V
Max
2.86
4.46
4.78
A
A
—
—
-40 C
Using EECON to read/write
V
voltage
are violated
Row Erase
-40 C
V
voltage
are violated
Row Erase
Bulk Erase
T
T
MIN
MIN
A
A
+85°C for Industrial
+125°C for Extended
© 2005 Microchip Technology Inc.
+85°C for Industrial
+125°C for Extended
= Minimum operating
= Minimum operating
Units
mV
V
V
V
V
T
T
A
A
Conditions
Not in operating
range
+85°C
+85°C
Conditions
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