ATTINY45V-10MU Atmel, ATTINY45V-10MU Datasheet - Page 162

• Manufacturer Part Number: ATTINY45V-10MU
• Description: IC AVR MCU FLASH 4K 10MHZ 20MLF
• Manufacturer: Atmel
• Series: AVR® ATtinyr

Specifications of ATTINY45V-10MU

• Core Processor: AVR
• Core Size: 8-Bit
• Speed: 10MHz
• Connectivity: USI
• Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
• Number Of I /o: 6
• Program Memory Size: 4KB (2K x 16)
• Program Memory Type: FLASH
• Eeprom Size: 256 x 8
• Ram Size: 256 x 8
• Voltage - Supply (vcc/vdd): 1.8 V ~ 5.5 V
• Data Converters: A/D 4x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 20-MLF®, QFN
• Processor Series: ATTINY4x
• Core: AVR8
• Data Bus Width: 8 bit
• Data Ram Size: 256 B
• Interface Type: USI
• Maximum Clock Frequency: 10 MHz
• Number Of Programmable I/os: 6
• Number Of Timers: 2
• Operating Supply Voltage: 1.8 V to 5.5 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 10 bit, 4 Channel
• Package: 20MLF EP
• Device Core: AVR
• Family Name: ATtiny
• Maximum Speed: 10 MHz
• For Use With: ATSTK600-DIP40 - STK600 SOCKET/ADAPTER 40-PDIPATAVRBC100 - REF DESIGN KIT BATTERY CHARGER770-1007 - ISP 4PORT ATMEL AVR MCU SPI/JTAGATAVRDRAGON - KIT DRAGON 32KB FLASH MEM AVRATAVRISP2 - PROGRAMMER AVR IN SYSTEMATJTAGICE2 - AVR ON-CHIP D-BUG SYSTEM
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 20-5. High-voltage Serial Programming Waveforms
20.7.5
20.7.6
20.7.7
20.7.8
20.7.9
20.7.10
162
SDO
PB0
PB1
PB2
PB3
SDI
SCI
SII
ATtiny25/45/85
Programming the EEPROM
Reading the Flash
Reading the EEPROM
Programming and Reading the Fuse and Lock Bits
Reading the Signature Bytes and Calibration Byte
Power-off sequence
0
MSB
MSB
MSB
1
The EEPROM is organized in pages, see
EEPROM, the data is latched into a page buffer. This allows one page of data to be pro-
grammed simultaneously. The programming algorithm for the EEPROM Data memory is as
follows (refer to
The algorithm for reading the Flash memory is as follows (refer to
The algorithm for reading the EEPROM memory is as follows (refer to
The algorithms for programming and reading the Fuse Low/High bits and Lock bits are shown in
Table
The algorithms for reading the Signature bytes and Calibration byte are shown in
Set SCI to “0”. Set RESET to “1”. Turn V
1. Load Command “Write EEPROM”.
2. Load EEPROM Page Buffer.
3. Program EEPROM Page. Wait after Instr. 2 until SDO goes high for the “Page Pro-
4. Repeat 2 through 3 until the entire EEPROM is programmed or until all data has been
5. End Page Programming by Loading Command “No Operation”.
1. Load Command "Read Flash".
2. Read Flash Low and High Bytes. The contents at the selected address are available at
1. Load Command “Read EEPROM”.
2. Read EEPROM Byte. The contents at the selected address are available at serial out-
gramming” cycle to finish.
programmed.
serial output SDO.
put SDO.
20-16.
2
Table
3
20-16):
4
5
CC
6
power off.
Table 21-11 on page
7
LSB
LSB
LSB
8
175. When programming the
Table
9
Table
20-16):
10
20-16):
Table
2586M–AVR–07/10
20-16.