ATTINY45V-10MU Atmel, ATTINY45V-10MU Datasheet - Page 160

• Manufacturer Part Number: ATTINY45V-10MU
• Description: IC AVR MCU FLASH 4K 10MHZ 20MLF
• Manufacturer: Atmel
• Series: AVR® ATtinyr

Specifications of ATTINY45V-10MU

• Core Processor: AVR
• Core Size: 8-Bit
• Speed: 10MHz
• Connectivity: USI
• Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
• Number Of I /o: 6
• Program Memory Size: 4KB (2K x 16)
• Program Memory Type: FLASH
• Eeprom Size: 256 x 8
• Ram Size: 256 x 8
• Voltage - Supply (vcc/vdd): 1.8 V ~ 5.5 V
• Data Converters: A/D 4x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 20-MLF®, QFN
• Processor Series: ATTINY4x
• Core: AVR8
• Data Bus Width: 8 bit
• Data Ram Size: 256 B
• Interface Type: USI
• Maximum Clock Frequency: 10 MHz
• Number Of Programmable I/os: 6
• Number Of Timers: 2
• Operating Supply Voltage: 1.8 V to 5.5 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 10 bit, 4 Channel
• Package: 20MLF EP
• Device Core: AVR
• Family Name: ATtiny
• Maximum Speed: 10 MHz
• For Use With: ATSTK600-DIP40 - STK600 SOCKET/ADAPTER 40-PDIPATAVRBC100 - REF DESIGN KIT BATTERY CHARGER770-1007 - ISP 4PORT ATMEL AVR MCU SPI/JTAGATAVRDRAGON - KIT DRAGON 32KB FLASH MEM AVRATAVRISP2 - PROGRAMMER AVR IN SYSTEMATJTAGICE2 - AVR ON-CHIP D-BUG SYSTEM
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

20.7.2
20.7.3
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ATtiny25/45/85
Considerations for Efficient Programming
Chip Erase
If the rise time of the V
tive algorithm can be used:
Table 20-15. High-voltage Reset Characteristics
The loaded command and address are retained in the device during programming. For efficient
programming, the following should be considered.
The Chip Erase will erase the Flash and EEPROM
not reset until the Program memory has been completely erased. The Fuse bits are not
Supply Voltage
V
4.5V
5.5V
3. Wait 20 - 60 µs, and apply 11.5 - 12.5V to RESET.
4. Keep the Prog_enable pins unchanged for at least 10 µs after the High-voltage has
5. Release the Prog_enable[2] pin to avoid drive contention on the Prog_enable[2]/SDO
6. Wait at least 300 µs before giving any serial instructions on SDI/SII.
7. Exit Programming mode by power the device down or by bringing RESET pin to 0V.
1. Set Prog_enable pins listed in
2. Apply 4.5 - 5.5V between V
3. Monitor V
4. Keep the Prog_enable pins unchanged for at least 10 µs after the High-voltage has
5. Release the Prog_enable[2] pin to avoid drive contention on the Prog_enable[2]/SDO
6. Wait until V
7. Exit Programming mode by power the device down or by bringing RESET pin to 0V.
• The command needs only be loaded once when writing or reading multiple memory
• Skip writing the data value 0xFF that is the contents of the entire EEPROM (unless the
• Address High byte needs only be loaded before programming or reading a new 256 word
CC
locations.
EESAVE Fuse is programmed) and Flash after a Chip Erase.
window in Flash or 256 byte EEPROM. This consideration also applies to Signature bytes
reading.
been applied to ensure the Prog_enable Signature has been latched.
pin.
been applied to ensure the Prog_enable Signature has been latched.
pin.
SDI/SII.
CC
CC
, and as soon as V
actually reaches 4.5 - 5.5V before giving any serial instructions on
RESET Pin High-voltage Threshold
CC
is unable to fulfill the requirements listed above, the following alterna-
CC
V
and GND.
Table 20-14
11.5V
11.5V
CC
HVRST
reaches 0.9 - 1.1V, apply 11.5 - 12.5V to RESET.
to “000”, RESET pin and V
(1)
memories plus Lock bits. The Lock bits are
Minimum High-voltage Period for
Latching Prog_enable
t
100 ns
100 ns
HVRST
CC
to 0V.
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