BGF 119 E6329 Infineon Technologies, BGF 119 E6329 Datasheet - Page 5
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BGF 119 E6329
Manufacturer Part Number
BGF 119 E6329
Description
TVS DIODE ESD 1CH 8V WLP-4-1
Manufacturer
Infineon Technologies
Datasheet
1.BGF_119_E6329.pdf
(7 pages)
Specifications of BGF 119 E6329
Voltage - Reverse Standoff (typ)
8V
Voltage - Breakdown
10V
Polarization
Unidirectional
Mounting Type
Surface Mount
Package / Case
4-WLP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power (watts)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
BGF119E6329XT
Table 1
Parameter
Voltage at all pins to GND
Operating temperature range
Storage temperature range
Electrostatic discharge according to IEC61000-
4-2
1) Contact discharge
Table 2
Parameter
Line capacitance to GND
Forward voltage
Break down voltage
Clamping voltage during transient
Leakage current of line to GND
1) Otherwise specified at
2) To avoid high temperature and possible disassembling of component from the board, DC current operation to be limited to
3) 8/20 s pulse waveform according to IEC61000-4-5
Figure 1
Data Sheet
1)
few seconds
at all pins
Maximum Ratings
Electrical Characteristics
Schematic
T
A
B1 (GND)
= 25 C
A1
1)
Symbol
V
T
T
V
Symbol
C
V
V
V
I
R
OP
STG
P
ESD
F
BR
CL
T
2)
3)
5
Min.
0
-30
-55
-15
Min.
10
Values
Values
Typ.
Typ.
230
10
11
12
1
10
100
B2 (GND)
Max.
8
+85
+150
15
Max.
1.1
12
13
800
A2
Transient Voltage Suppressor
Unit
V
°C
kV
Unit
pF
V
V
V
nA
C
Note /
Test Condition
Note /
Test Condition
V
I
I
T
T
T
I
V
T
T
T
F
R
R
A
A
A
A
A
A
R
R
V3.0, 2008-11-18
= 850 mA
= -30°C
= 25°C
= 85°C
= -30°C
= 25°C
= 85°C
= 15 mA
= 1 A
= 0 V
= 8 V
BGF119