PESD5V0S1BB,115 NXP Semiconductors, PESD5V0S1BB,115 Datasheet - Page 3
![DIODE BIDIR ESD PROTECT SOD523](/photos/5/25/52584/568-sod-523_1-1g1a_sc-79_sod523_sml.jpg)
PESD5V0S1BB,115
Manufacturer Part Number
PESD5V0S1BB,115
Description
DIODE BIDIR ESD PROTECT SOD523
Manufacturer
NXP Semiconductors
Datasheet
1.PESD5V0S1BA115.pdf
(15 pages)
Specifications of PESD5V0S1BB,115
Package / Case
SC-79, SOD-523
Voltage - Reverse Standoff (typ)
5V
Voltage - Breakdown
5.5V
Power (watts)
130W
Polarization
Bidirectional
Mounting Type
Surface Mount
Polarity
Bidirectional
Clamping Voltage
14 V
Operating Voltage
5 V
Breakdown Voltage
9.5 V
Termination Style
SMD/SMT
Peak Surge Current
12 A
Peak Pulse Power Dissipation
130 W
Capacitance
35 pF
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Dimensions
0.85(Max) mm W x 1.25(Max) mm L
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-4054-2
934058005115
PESD5V0S1BB T/R
PESD5V0S1BB T/R
934058005115
PESD5V0S1BB T/R
PESD5V0S1BB T/R
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
PESD5V0S1BB,115
Manufacturer:
NXP Semiconductors
Quantity:
7 200
Part Number:
PESD5V0S1BB,115
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
NXP Semiconductors
5. Limiting values
PESD5V0S1BA_BB_BL_4
Product data sheet
Table 6.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
Table 7.
[1]
[2]
Table 8.
Symbol
Per diode
P
I
T
T
T
Symbol Parameter
ESD
Standard
IEC 61000-4-2, level 4 (ESD);
HBM MIL-STD 883; class 3
PP
j
amb
stg
PP
Non-repetitive current pulse 8/20 s exponentially decaying waveform according to IEC61000-4-5; see
Figure
Measured from pin 1 to pin 2.
Measured from pin 1 to pin 2.
Device stressed with ten non-repetitive ElectroStatic Discharge (ESD) pulses; see
electrostatic discharge
capability
1.
Limiting values
ESD maximum ratings
ESD standards compliance
Parameter
peak pulse power
peak pulse current
junction temperature
ambient temperature
storage temperature
Rev. 04 — 20 August 2009
Figure 2
Low capacitance bidirectional ESD protection diodes
Conditions
IEC 61000-4-2 (contact
discharge)
HBM MIL-Std 883
Conditions
8/20 s
8/20 s
PESD5V0S1BA/BB/BL
Conditions
15 kV (air);
4 kV
[1][2]
[1][2]
[1][2]
Min
-
-
-
Min
-
-
65
65
8 kV (contact)
Figure
© NXP B.V. 2009. All rights reserved.
Max
130
12
150
Max
30
10
150
150
2.
Unit
W
A
Unit
kV
kV
C
C
C
3 of 15