MMBZ33VAL,215 NXP Semiconductors, MMBZ33VAL,215 Datasheet - Page 8

• Manufacturer Part Number: MMBZ33VAL,215
• Description: DIODE ESD PROT DBL 26V SOT-23
• Manufacturer: NXP Semiconductors

Specifications of MMBZ33VAL,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Voltage - Reverse Standoff (typ): 26V
• Voltage - Breakdown: 31.35V
• Power (watts): 40W
• Polarization: 2 Channel Array - Unidirectional
• Mounting Type: Surface Mount
• Channels: 2 Channels
• Breakdown Voltage: 31.35 V
• Capacitance: 55 pF
• Termination Style: Gull Wing Leads
• Operating Temperature Range: - 55 C to + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934061802215

NXP Semiconductors
MMBZXVAL_SER_1
Product data sheet
Fig 3.
Fig 5.
P
(W)
(pF)
C
PPM
(1) MMBZ15VAL: unidirectional
(2) MMBZ15VAL: bidirectional
(3) MMBZ27VAL: unidirectional
(4) MMBZ27VAL: bidirectional
100
10
10
d
10
80
60
40
20
1
0
3
2
10
0
MMBZ27VAL: unidirectional and bidirectional
T
Rated peak pulse power as a function of
exponential pulse duration (rectangular
waveform); typical values
f = 1 MHz; T
Diode capacitance as a function of reverse
voltage; typical values
amb
2
= 25 C
10
5
1
amb
= 25 C
10
1
10
15
(1)
(2)
(3)
(4)
10
20
Double ESD protection diodes for transient overvoltage suppression
2
006aab320
006aab322
t
V
p
R
(ms)
(V)
Rev. 01 — 1 September 2008
10
25
3
Fig 4.
Fig 6.
P
PPM(25 C)
P
PPM
(nA)
I
RM
10
10
10
10
1.2
0.8
0.4
10
1
0
2
1
2
3
0
Relative variation of rated peak pulse power as
a function of junction temperature; typical
values
MMBZ27VAL: V
Reverse leakage current as a function of
ambient temperature; typical values
75
MMBZxVAL series
25
50
RWM
25
= 22 V
100
75
150
© NXP B.V. 2008. All rights reserved.
125
T
T
006aab321
006aab323
amb
j
( C)
( C)
200
175
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