MMBZ33VAL,215 NXP Semiconductors, MMBZ33VAL,215 Datasheet - Page 6

• Manufacturer Part Number: MMBZ33VAL,215
• Description: DIODE ESD PROT DBL 26V SOT-23
• Manufacturer: NXP Semiconductors

Specifications of MMBZ33VAL,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Voltage - Reverse Standoff (typ): 26V
• Voltage - Breakdown: 31.35V
• Power (watts): 40W
• Polarization: 2 Channel Array - Unidirectional
• Mounting Type: Surface Mount
• Channels: 2 Channels
• Breakdown Voltage: 31.35 V
• Capacitance: 55 pF
• Termination Style: Gull Wing Leads
• Operating Temperature Range: - 55 C to + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934061802215

NXP Semiconductors
7. Characteristics
MMBZXVAL_SER_1
Product data sheet
Table 10.
T
Symbol Parameter
Per diode
V
V
I
V
RM
amb
F
RWM
BR
= 25 C unless otherwise specified.
forward voltage
reverse standoff
voltage
reverse leakage current
breakdown voltage
Characteristics
MMBZ12VAL
MMBZ12VAL/DG
MMBZ15VAL
MMBZ15VAL/DG
MMBZ18VAL
MMBZ18VAL/DG
MMBZ20VAL
MMBZ20VAL/DG
MMBZ27VAL
MMBZ27VAL/DG
MMBZ33VAL
MMBZ33VAL/DG
MMBZ12VAL
MMBZ12VAL/DG
MMBZ15VAL
MMBZ15VAL/DG
MMBZ18VAL
MMBZ18VAL/DG
MMBZ20VAL
MMBZ20VAL/DG
MMBZ27VAL
MMBZ27VAL/DG
MMBZ33VAL
MMBZ33VAL/DG
MMBZ12VAL
MMBZ12VAL/DG
MMBZ15VAL
MMBZ15VAL/DG
MMBZ18VAL
MMBZ18VAL/DG
MMBZ20VAL
MMBZ20VAL/DG
MMBZ27VAL
MMBZ27VAL/DG
MMBZ33VAL
MMBZ33VAL/DG
Double ESD protection diodes for transient overvoltage suppression
Rev. 01 — 1 September 2008
Conditions
I
V
V
V
V
V
V
I
F
R
RWM
RWM
RWM
RWM
RWM
RWM
= 10 mA
= 1 mA
= 8.5 V
= 12 V
= 14.5 V
= 17 V
= 22 V
= 26 V
MMBZxVAL series
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
11.4
14.25
17.1
19
25.65
31.35
Typ
-
-
-
-
-
-
-
0.1
0.1
0.1
0.1
0.1
0.1
12
15
18
20
27
33
© NXP B.V. 2008. All rights reserved.
Max
0.9
8.5
12
14.5
17
22
26
5
5
5
5
5
5
12.6
15.75
18.9
21
28.35
34.65
Unit
V
V
V
V
V
V
V
nA
nA
nA
nA
nA
nA
V
V
V
V
V
V
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