ESD5V0S5US E6327 Infineon Technologies, ESD5V0S5US E6327 Datasheet - Page 2

• Manufacturer Part Number: ESD5V0S5US E6327
• Description: DIODES TVS UNIDIRECT SOT-363
• Manufacturer: Infineon Technologies

Specifications of ESD5V0S5US E6327

• Package / Case: SC-70-6, SC-88, SOT-363
• Voltage - Reverse Standoff (typ): 5V
• Voltage - Breakdown: 5.7V
• Power (watts): 130W
• Polarization: 5 Channel Array - Unidirectional
• Mounting Type: Surface Mount
• Polarity: Unidirectional
• Clamping Voltage: 13 V
• Operating Voltage: 5.3 V
• Breakdown Voltage: 5.7 V
• Peak Surge Current: 10 A
• Peak Pulse Power Dissipation: 130 W
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 55 C
• Dimensions: 1.25 mm W x 2 mm L
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 5V0S5USE6327XT; ESD5V0S5US E6327; ESD5V0S5USE6327INTR; ESD5V0S5USE6327T; SP000205611

Maximum Ratings at T
Parameter
ESD contact discharge per diode
Peak pulse current ( t
Peak pulse power ( t
Operating temperature range
Storage temperature
Electrical Characteristics at T
Parameter
Characteristics
Reverse working voltage
Breakdown voltage
I
Reverse current
V
V
Clamping voltage (positive transients)
I
I
Forward clamping voltage (negative transients)
I
I
Diode capacitance
V
V
1
2
(BR)
PP
PP
PP
PP
V
I
pp
R
R
R
R
ESD
= 3.3 V
= 5 V
= 0 V, f = 1 MHz
= 5 V, f = 1 MHz
= 1 A, t
= 10 A, t
= 1 A, t
= 10 A, t
according to IEC61000-4-5
= 1 mA
according to IEC61000-4-2
p
p
p
p
= 8/20 µs
= 8/20 µs
= 8/20 µs
= 8/20 µs
p
p
= 8 / 20 µs) per diode
2)
2)
= 8 / 20 µs) per diode
2)
2)
A
= 25°C, unless otherwise specified
A
1)
= 25°C, unless otherwise specified
2)
2
Symbol
V
I
P
T
T
Symbol
V
V
I
V
V
C
pp
R
ESD
pk
op
stg
RWM
(BR)
CL
FC
T
min.
5.7
-
-
-
-
-
-
-
-
-
-55...125
-65...150
Values
Value
10.5
130
typ.
6.7
3.5
30
10
70
35
5
1
7
-
-
ESD5V0SxUS
max.
5.3
7.7
13
90
55
1
5
3
6
2007-12-11
9
Unit
kV
A
W
°C
Unit
V
µA
V
pF