NUP1301ML3T1G ON Semiconductor, NUP1301ML3T1G Datasheet - Page 4

• Manufacturer Part Number: NUP1301ML3T1G
• Description: IC DIODE ARRAY LOCAP ESD SOT-23
• Manufacturer: ON Semiconductor

Specifications of NUP1301ML3T1G

• Voltage - Reverse Standoff (typ): 70V
• Voltage - Breakdown: 70V
• Polarization: 2 Channel Array - Unidirectional
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Product: Standard Recovery Rectifier
• Configuration: Dual Series
• Reverse Voltage: 70 V
• Forward Voltage Drop: 1.25 V @ 0.15 A
• Forward Continuous Current: 0.715 A
• Max Surge Current: 0.45 A
• Reverse Current Ir: 2.5 uA
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power (watts): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: NUP1301ML3T1G; NUP1301ML3T1GOSTR

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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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V
D
1
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
G
A
3
L
2
H
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
B S
C
0.037
0.95
0.035
0.9
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Japan: ON Semiconductor, Japan Customer Focus Center
K
0.031
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051
Phone: 81−3−5773−3850
PACKAGE DIMENSIONS
SOLDERING FOOTPRINT*
0.8
NUP1301ML3T1
http://onsemi.com
SOT−23 (TO−236)
CASE 318−08
ISSUE AK
J
4
SCALE 10:1
0.037
0.95
0.079
inches
2.0
mm
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW
Y14.5M, 1982.
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
STANDARD 318−08.
STYLE 11:
DIM
PIN 1. ANODE
A
B
C
D
G
H
K
J
L
S
V
2. CATHODE
3. CATHODE−ANODE
0.0472
0.0350
0.0150
0.0701
0.0005
0.0034
0.0140
0.0350
0.0830
0.0177
0.1102
ON Semiconductor Website: http://onsemi.com
Order Literature: http://www.onsemi.com/litorder
For additional information, please contact your
local Sales Representative.
MIN
INCHES
0.0551
0.0440
0.0200
0.0807
0.0040
0.0070
0.0285
0.0401
0.1039
0.0236
0.1197
MAX
0.013
0.085
MILLIMETERS
NUF1301ML3T1/D
MIN
2.80
1.20
0.89
0.37
1.78
0.35
0.89
2.10
0.45
MAX
0.100
0.177
3.04
1.40
0.50
2.04
0.69
1.02
2.64
0.60
1.11