NUP1301ML3T1G ON Semiconductor, NUP1301ML3T1G Datasheet - Page 3
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NUP1301ML3T1G
Manufacturer Part Number
NUP1301ML3T1G
Description
IC DIODE ARRAY LOCAP ESD SOT-23
Manufacturer
ON Semiconductor
Datasheet
1.NUP1301ML3T1G.pdf
(4 pages)
Specifications of NUP1301ML3T1G
Voltage - Reverse Standoff (typ)
70V
Voltage - Breakdown
70V
Polarization
2 Channel Array - Unidirectional
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Product
Standard Recovery Rectifier
Configuration
Dual Series
Reverse Voltage
70 V
Forward Voltage Drop
1.25 V @ 0.15 A
Forward Continuous Current
0.715 A
Max Surge Current
0.45 A
Reverse Current Ir
2.5 uA
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power (watts)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
NUP1301ML3T1G
NUP1301ML3T1GOSTR
NUP1301ML3T1GOSTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NUP1301ML3T1G
Manufacturer:
ON
Quantity:
6 000
Company:
Part Number:
NUP1301ML3T1G
Manufacturer:
ON
Quantity:
30 000
Part Number:
NUP1301ML3T1G
Manufacturer:
ON/安森美
Quantity:
20 000
Electrostatic Discharge
to employ low−capacitance diode arrays in a rail−to−rail
configuration. Two devices per line are connected between
two fixed voltage references such as V
the transient voltage exceeds the forward voltage (V
of the diode plus the reference voltage, the diodes direct the
A common means of protecting high−speed data lines is
ESD Input Signal
CC
and ground. When
Figure 1. ESD Test Circuit
APPLICATION NOTE
NUP1301ML3T1
F
http://onsemi.com
) drop
3
surge to the supply rail or ground. This method has several
advantages including low loading capacitance, fast response
time, and inherent bidirectionality (within the reference
voltages). See Figure 1 for the test circuit used to verify the
ESD rating for this device.