NUP1301ML3T1G ON Semiconductor, NUP1301ML3T1G Datasheet - Page 2

• Manufacturer Part Number: NUP1301ML3T1G
• Description: IC DIODE ARRAY LOCAP ESD SOT-23
• Manufacturer: ON Semiconductor

Specifications of NUP1301ML3T1G

• Voltage - Reverse Standoff (typ): 70V
• Voltage - Breakdown: 70V
• Polarization: 2 Channel Array - Unidirectional
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Product: Standard Recovery Rectifier
• Configuration: Dual Series
• Reverse Voltage: 70 V
• Forward Voltage Drop: 1.25 V @ 0.15 A
• Forward Continuous Current: 0.715 A
• Max Surge Current: 0.45 A
• Reverse Current Ir: 2.5 uA
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power (watts): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: NUP1301ML3T1G; NUP1301ML3T1GOSTR

2. FR−5 = 1.0  0.75  0.062 in.
3. Alumina = 0.4  0.3  0.024 in, 99.5% alumina.
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
Thermal Resistance Junction−to−Ambient
Lead Solder Temperature
Junction Temperature
Storage Temperature
Reverse Breakdown Voltage (I
Reverse Voltage Leakage Current
Diode Capacitance (between I/O and ground)
(V
Forward Voltage
R
Maximum 10 Seconds Duration
= 0, f = 1.0 MHz)
Characteristic
Characteristic
(BR)
= 100 mA)
(T
J
(V
(V
= 25 C unless otherwise noted) (Each Diode)
R
R
= 25 Vdc, T
= 70 Vdc, T
(I
(I
(I
(I
F
NUP1301ML3T1
F
(V
http://onsemi.com
F
F
= 150 mAdc)
= 1.0 mAdc)
R
= 10 mAdc)
= 50 mAdc)
J
J
= 70 Vdc)
= 150 C)
= 150 C)
2
Symbol
R
T
T
T
Symbol
qJA
stg
L
J
V
C
V
(BR)
I
R
D
F
Min
70
−
−
−
−
−
−
−
−
−65 to +150
−65 to 150
Max
625
260
Typ
−
−
−
−
−
−
−
−
−
1000
1250
Max
715
855
2.5
0.9
30
50
−
Unit
C/W
C
C
C
mV
mAdc
Unit
Vdc
pF
dc