PESD24VL2BT,215 NXP Semiconductors, PESD24VL2BT,215 Datasheet - Page 2

DIODE ESD PROTECTION SOT23

PESD24VL2BT,215

Manufacturer Part Number
PESD24VL2BT,215
Description
DIODE ESD PROTECTION SOT23
Manufacturer
NXP Semiconductors
Series
-r
Datasheet

Specifications of PESD24VL2BT,215

Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Voltage - Reverse Standoff (typ)
24V
Voltage - Breakdown
25.4V
Power (watts)
200W
Polarization
2 Channel Array - Bidirectional
Mounting Type
Surface Mount
Polarity
Bidirectional
Clamping Voltage
40 V
Operating Voltage
24 V
Breakdown Voltage
27.8 V
Termination Style
SMD/SMT
Peak Surge Current
3 A
Peak Pulse Power Dissipation
200 W
Capacitance
11 pF
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Dimensions
2.5 mm W x 3 mm L x 1.1 mm H
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-4035-2
934058867215
PESD24VL2BT T/R
PESD24VL2BT T/R

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PESD24VL2BT,215
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
NXP Semiconductors
2. Pinning information
3. Ordering information
4. Marking
PESDXL2BT_SER_2
Product data sheet
Table 2.
Table 3.
Table 4.
[1]
Pin
1
2
3
Type number
PESD3V3L2BT
PESD5V0L2BT
PESD12VL2BT
PESD15VL2BT
PESD24VL2BT
Type number
PESD3V3L2BT
PESD5V0L2BT
PESD12VL2BT
PESD15VL2BT
PESD24VL2BT
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Pinning
Ordering information
Marking codes
Low capacitance double bidirectional ESD protection diodes in SOT23
Description
cathode 1
cathode 2
double cathode
Rev. 02 — 25 August 2009
Package
Name
-
Description
plastic surface mounted package; 3 leads
Marking code
V3*
V4*
V5*
V6*
V7*
PESDxL2BT series
Simplified outline
[1]
1
3
2
Symbol
© NXP B.V. 2009. All rights reserved.
2
1
Version
SOT23
006aaa155
2 of 14
3

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