PESD2CAN,215 NXP Semiconductors, PESD2CAN,215 Datasheet - Page 5

• Manufacturer Part Number: PESD2CAN,215
• Description: DIODE ESD CAN SOT-23
• Manufacturer: NXP Semiconductors

Specifications of PESD2CAN,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Voltage - Reverse Standoff (typ): 24V
• Voltage - Breakdown: 26.2V
• Power (watts): 230W
• Polarization: 2 Channel Array - Bidirectional
• Mounting Type: Surface Mount
• Polarity: Bidirectional
• Clamping Voltage: 41 V
• Operating Voltage: 24 V
• Breakdown Voltage: 28 V
• Termination Style: SMD/SMT
• Peak Surge Current: 5 A
• Peak Pulse Power Dissipation: 230 W
• Capacitance: 25 pF
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4147-2; 934060118215; PESD2CAN T/R

NXP Semiconductors
PESD2CAN_1
Product data sheet
Fig 5. Diode capacitance as a function of reverse
Fig 7. Reverse voltage as a function of reverse
(pF)
(1) T
(2) T
(3) T
(4) T
(5) T
(V)
C
V
R
d
30
26
22
18
14
10
25
20
15
10
5
0
f = 1 MHz
voltage; typical values
T
I
leakage current; typical values
R
0
0
amb
amb
amb
amb
amb
amb
(4)
(5)
is less than 1 nA at 55 C and 25 C.
= 150 C
= 125 C
= 85 C
= 25 C
= 40 C
= 150 C
(1)
(2)
(3)
10
8
16
20
I
RM
V
R
006aaa938
006aaa940
(nA)
(V)
Rev. 01 — 22 December 2006
24
30
Fig 6. Reverse current as a function of reverse
Fig 8. V-I characteristics for a bidirectional ESD
V
(mA)
(1) T
(2) T
(3) T
CL
I
R
50
40
30
20
10
0
V
voltage; typical values
protection diode
24
BR
amb
amb
amb
= 55 C
= 25 C
= 150 C
V
RWM
26
(1)
CAN bus ESD protection diode
28
I
I
RM
PP
I
(2)
R
I
I
I
RM
R
PP
30
PESD2CAN
© NXP B.V. 2006. All rights reserved.
(3)
32
006aaa939
V
R
V
RWM
(V)
+
34
006aaa676
V
BR
V
5 of 11
CL