PESD3V3S2UQ,115 NXP Semiconductors, PESD3V3S2UQ,115 Datasheet - Page 13

• Manufacturer Part Number: PESD3V3S2UQ,115
• Description: DIODE DBL ESD PROTECTION SOT663
• Manufacturer: NXP Semiconductors

Specifications of PESD3V3S2UQ,115

• Package / Case: SOT-663
• Voltage - Reverse Standoff (typ): 3.3V
• Voltage - Breakdown: 5.6V
• Power (watts): 150W
• Polarization: 2 Channel Array - Unidirectional
• Mounting Type: Surface Mount
• Polarity: Unidirectional
• Clamping Voltage: 8 V
• Operating Voltage: 3.3 V
• Breakdown Voltage: 5.6 V
• Termination Style: SMD/SMT
• Peak Surge Current: 15 A
• Peak Pulse Power Dissipation: 150 W
• Capacitance: 200 pF
• Maximum Operating Temperature: + 105 C
• Minimum Operating Temperature: - 65 C
• Dimensions: 1.3 mm W x 1.7 mm L x 0.6 mm H
• Operating Temperature Min Deg. C: -65C
• Operating Temperature Max Deg. C: 150C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4519-2; 934057839115; PESD3V3S2UQ T/R; PESD3V3S2UQ T/R

NXP Semiconductors
Revision history
Table 1.
Document ID
PESDXS2UQ_SER_N_3
Modifications:
PESDXS2UQ_SERIES_2 20040427
PESDXS2UQ_SERIES_1 20031215
Revision history
Release date
20080911
•
Asterisks and note 1 removed in Marking Table
Data sheet status
Product data sheet
Product specification
Product specification
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2008.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [e-mail]
Double ESD protection diodes in SOT663 package
Change notice
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PESDxS2UQ series
Document identifier: PESDXS2UQ_SER_N_3
Supersedes
PESDXS2UQ_SERIES_2
PESDXS2UQ_SERIES_1
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Date of release: 11 September 2008
All rights reserved.