MT8VDDT6464AG-335F4 Micron Technology Inc, MT8VDDT6464AG-335F4 Datasheet - Page 18

• Manufacturer Part Number: MT8VDDT6464AG-335F4
• Description: MODULE DDR SDRAM 512MB 184-DIMM
• Manufacturer: Micron Technology Inc

Specifications of MT8VDDT6464AG-335F4

• Memory Type: DDR SDRAM
• Memory Size: 512MB
• Speed: 333MT/s
• Package / Case: 184-DIMM
• Main Category: DRAM Module
• Sub-category: DDR SDRAM
• Module Type: 184UDIMM
• Device Core Size: 64b
• Organization: 64Mx64
• Total Density: 512MByte
• Chip Density: 512Mb
• Maximum Clock Rate: 333MHz
• Operating Supply Voltage (typ): 2.5V
• Operating Current: 1.4A
• Number Of Elements: 8
• Operating Supply Voltage (max): 2.7V
• Operating Supply Voltage (min): 2.3V
• Operating Temp Range: 0C to 70C
• Operating Temperature Classification: Commercial
• Pin Count: 184
• Mounting: Socket
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Table 16: DDR SDRAM Component Electrical Characteristics and Recommended AC
Notes: 1–5, 12–15, 29, 49
pdf: 09005aef80867ab3, source: 09005aef80867a99
DD8C16_32_64x64AG.fm - Rev. G 9/04 EN
DQS read preamble
DQS read postamble
ACTIVE bank a to ACTIVE bank b command
DQS write preamble
DQS write preamble setup time
DQS write postamble
Write recovery time
Internal WRITE to READ command delay
Data valid output window
REFRESH to REFRESH command
interval
Average periodic refresh
interval
Terminating voltage delay to V
Exit SELF REFRESH to non-READ command
Exit SELF REFRESH to READ command
Operating Conditions (Continued)
AC CHARACTERISTICS
PARAMETER
;
notes appear on pages 19–22; 0°C ≤ T
DD
128MB
256MB,
512MB
128MB
256MB,
512MB
t
t
t
t
t
t
WPRES
t
t
t
SYM
WPRE
t
WPST
t
t
XSNR
XSRD
RPRE
REFC
RPST
t
WTR
RRD
REFI
VTD
WR
na
MIN
0.25
t
200
0.9
0.4
0.4
12
15
75
QH -
0
1
0
18
-335
A
t
DQSQ
≤ +70°C; V
128MB, 256MB, 512MB (x64, SR)
MAX
140.6
70.3
15.6
1.1
0.6
0.6
7.8
Micron Technology, Inc., reserves the right to change products or specifications without notice.
184-PIN DDR SDRAM UDIMM
MIN
0.25
t
200
0.9
0.4
0.4
QH -
DD
15
15
75
0
1
0
-262
= V
t
DQSQ
DD
MAX
140.6
70.3
15.6
1.1
0.6
0.6
7.8
Q = +2.5V ±0.2V
MIN
0.25
t
200
0.9
0.4
0.4
QH -
15
15
75
-26A/-265
0
1
0
t
DQSQ
MAX
140.6
70.3
15.6
1.1
0.6
0.6
7.8
UNITS
©2004 Micron Technology. Inc.
t
t
t
t
t
t
CK
CK
ns
CK
ns
CK
ns
CK
ns
µs
µs
µs
µs
ns
ns
CK
NOTES
18, 19
38
38
17
22
21
21
21
21