MT9VDDF6472Y-335D3 Micron Technology Inc, MT9VDDF6472Y-335D3 Datasheet - Page 2

• Manufacturer Part Number: MT9VDDF6472Y-335D3
• Description: MODULE SDRAM DDR 512MB 184DIMM
• Manufacturer: Micron Technology Inc

Specifications of MT9VDDF6472Y-335D3

• Memory Type: DDR SDRAM
• Memory Size: 512MB
• Speed: 333MT/s
• Package / Case: 184-DIMM
• Main Category: DRAM Module
• Sub-category: DDR SDRAM
• Module Type: 184RDIMM
• Device Core Size: 72b
• Organization: 64Mx72
• Total Density: 512MByte
• Chip Density: 512Mb
• Maximum Clock Rate: 333MHz
• Operating Supply Voltage (typ): 2.5V
• Operating Current: 1.575A
• Number Of Elements: 9
• Operating Supply Voltage (max): 2.7V
• Operating Supply Voltage (min): 2.3V
• Operating Temp Range: 0C to 70C
• Operating Temperature Classification: Commercial
• Pin Count: 184
• Mounting: Socket
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 1:
Table 2:
Table 3:
PDF: 09005aef8082c948/Source: 09005aef807d56a1
ddf9c32_64x72.fm - Rev. C 10/08 EN
Parameter
Part Number
Refresh count
Row address
Device bank address
Device configuration
Column address
Module rank address
MT9VDDF3272G-40B__
MT9VDDF3272Y-40B__
MT9VDDF3272G-335__
MT9VDDF3272Y-335__
MT9VDDF3272G-262__
MT9VDDF3272G-26A__
MT9VDDF3272G-265__
Speed
Grade
-26A
-40B
-335
-262
-265
Key Timing Parameters
Addressing
Part Numbers and Timing Parameters – 256MB Modules
Base device: MT46V32M8,
Nomenclature
2
Industry
PC3200
PC2700
PC2100
PC2100
PC2100
Notes:
Notes:
1. The values of
1. Data sheets for the base devices can be found on Micron’s Web site.
2. All part numbers end with a two-place code (not shown) that designates component and
actual DDR SDRAM device specifications are 15ns.
PCB revisions. Consult factory for current revision codes. Example: MT9VDDF3272Y-335G3.
Module
Density
256MB
256MB
256MB
256MB
256MB
256MB
256MB
CL = 3
400
–
–
–
–
1
256Mb DDR SDRAM
256MB, 512MB (x72, ECC, SR) 184-Pin DDR SDRAM RDIMM
Data Rate (MT/s)
t
RCD and
Configuration
CL = 2.5
32 Meg x 72
32 Meg x 72
32 Meg x 72
32 Meg x 72
32 Meg x 72
32 Meg x 72
32 Meg x 72
333
333
266
266
266
t
RP for -335 modules show 18ns to align with industry specifications;
256Mb (32 Meg x 8)
2
8K (A0–A12)
4 (BA0, BA1)
CL = 2
1K (A0–A9)
266
266
266
266
200
256MB
1 (S0#)
8K
Bandwidth
Module
3.2 GB/s
3.2 GB/s
2.7 GB/s
2.7 GB/s
2.1 GB/s
2.1 GB/s
2.1 GB/s
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
(ns)
RCD
15
18
15
20
20
Memory Clock/
7.5ns/266 MT/s
7.5ns/266 MT/s
7.5ns/266 MT/s
5ns/400 MT/s
5ns/400 MT/s
6ns/333 MT/s
6ns/333 MT/s
Data Rate
(ns)
t
15
18
15
20
20
RP
512Mb (64 Meg x 8)
©2002 Micron Technology, Inc. All rights reserved.
2K (A0–A9, A11)
8K (A0–A12)
4 (BA0, BA1)
512MB
1 (S0#)
(ns)
8K
t
55
60
60
65
65
RC
(CL-
Clock Cycles
2.5-3-3
2.5-3-3
2.5-3-3
t
3-3-3
3-3-3
2-2-2
2-3-3
RCD-
Features
Notes
t
RP)
1