MT8HTF6464HDY-40EB3 Micron Technology Inc, MT8HTF6464HDY-40EB3 Datasheet - Page 14

• Manufacturer Part Number: MT8HTF6464HDY-40EB3
• Description: MODULE DDR2 512MB 200SODIMM
• Manufacturer: Micron Technology Inc

Specifications of MT8HTF6464HDY-40EB3

• Memory Type: DDR2 SDRAM
• Memory Size: 512MB
• Speed: 400MT/s
• Package / Case: 200-SODIMM
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 11: DDR2 I
Values shown for MT47H32M16 DDR2 SDRAM only and are computed from values specified in the 512Mb (32 Meg x 16)
component data sheet
PDF: 09005aef80ebed66
htf8c32_64_128x64hd.pdf - Rev. E 3/10 EN
Parameter
Operating bank interleave read current: All device banks interleaving
reads; I
=
HIGH, S# is HIGH between valid commands; Address bus inputs are stable
during deselects; Data bus inputs are switching
t
CK (I
OUT
DD
),
= 0mA; BL = 4, CL = CL (I
t
RC =
t
RC (I
DD
DD
Specifications and Conditions – 512MB (Continued)
),
t
RRD =
t
RRD (I
DD
), AL =
DD
),
256MB, 512MB, 1GB (x64, DR) 200-Pin DDR2 SODIMM
t
t
RCD (I
RCD =
DD
t
RCD (I
) - 1 ×
DD
14
t
CK (I
); CKE is
DD
);
t
CK
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Symbol
I
DD7
1
-80E/-
1500
800
1420
-667
© 2006 Micron Technology, Inc. All rights reserved.
I
DD
1380
-53E
Specifications
-40E
1360
Units
mA