MT18VDDF6472G-335G3 Micron Technology Inc, MT18VDDF6472G-335G3 Datasheet - Page 14

• Manufacturer Part Number: MT18VDDF6472G-335G3
• Description: MODULE SDRAM DDR 512MB 184DIMM
• Manufacturer: Micron Technology Inc

Specifications of MT18VDDF6472G-335G3

• Memory Type: DDR SDRAM
• Memory Size: 512MB
• Speed: 333MT/s
• Package / Case: 184-DIMM
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Table 13:
Table 14:
PDF: 09005aef8074e85b/Source: 09005aef8072fe49
DDF18C64_128x72.fm - Rev. F 9/08 EN
Parameter
Parameter
DC high-level input voltage
DC low-level input voltage
Input voltage (limits)
Input differential-pair cross voltage
Input differential voltage
Input differential voltage
Input current
Dynamic supply current
Dynamic supply current
Dynamic supply current
Input capacitance
Stabilization time
Input clock slew rate
SSC modulation frequency
SSC clock input frequency deviation
PLL loop bandwidth (–3dB from unity gain)
PLL Specifications
CVF857 device or equivalent JESD82-1A
PLL Clock Driver Timing Requirements and Switching Characteristics
Notes:
1. PLL timing and switching specifications are critical for proper operation of the DDR DIMM.
This is a subset of parameters for the specific PLL used. Detailed PLL information is available
in JEDEC Standard JESD82-1A.
512MB, 1GB (x72, ECC, SR) 184-Pin DDR SDRAM RDIMM
Symbol
V
V
I
I
DDPD
I
ID
ID
V
V
V
DDQ
ADD
C
V
I
(
(
IH
IN
IX
IN
IL
I
DC
AC
)
)
14
(V
DD
Symbol
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
Min
–0.3
–0.3
0.36
0.70
Q/2) - 0.2
slr(i)
–10
1.7
2.0
t
–
–
–
–
–
–
L
Register and PLL Specifications
Min
1.0
2.0
30
0
–
(V
V
V
V
V
DD
DD
DD
DD
DD
©2003 Micron Technology, Inc. All rights reserved.
Max
Q/2) + 0.2
+10
200
300
Q + 0.3
Q + 0.3
Q + 0.6
Q + 0.6
0.7
3.5
12
–0.50
Max
100
4.0
50
–
Units
MHz
V/ns
kHz
Units
µs
%
mA
µA
µA
µA
pF
V
V
V
V
V
V