MT18VDVF12872DY-335D4 Micron Technology Inc, MT18VDVF12872DY-335D4 Datasheet - Page 21

• Manufacturer Part Number: MT18VDVF12872DY-335D4
• Description: MODULE DDR 1GB 184DIMM VLP
• Manufacturer: Micron Technology Inc

Specifications of MT18VDVF12872DY-335D4

• Memory Type: DDR SDRAM
• Memory Size: 1GB
• Speed: 333MT/s
• Package / Case: 184-DIMM
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 14:
PDF: 09005aef81c73825/Source: 09005aef81c73837
DVF18C64_128x72D_2.fm - Rev. A 8/05 EN
AC Characteristics
Parameter
ACTIVE to ACTIVE/AUTO REFRESH command
period
AUTO REFRESH command period
ACTIVE to READ or WRITE delay
PRECHARGE command period
DQS read preamble
DQS read postamble
ACTIVE bank a to ACTIVE bank b
command
DQS write preamble
DQS write preamble setup time
DQS write postamble
Write recovery time
Internal WRITE to READ command delay
Data valid output window
REFRESH to REFRESH command interval
Average periodic refresh interval
Terminating voltage delay to V
Exit SELF REFRESH to non-READ command
Exit SELF REFRESH to READ command
Electrical Characteristics and Recommended AC Operating Conditions (Continued)
DDR SDRAM components only
Notes: 1–5, 12–15, 29, 48; notes appear on pages 22–26; 0°C ≤ T
DD
Symbol
t
t
WPRES
t
t
t
t
t
t
t
WPRE
t
t
WPST
t
t
XSNR
XSRD
t
RPRE
t
REFC
RPST
WTR
RCD
RRD
REFI
VTD
t
RFC
t
WR
na
RC
RP
512MB, 1GB: (x72, DR) 184-Pin DDR VLP RDIMM
21
0.25
t
Min
200
0.9
0.4
0.4
QH -
60
75
15
15
12
15
75
0
1
0
-335
t
DQSQ
Max
70.3
15.6
1.1
0.6
0.6
Micron Technology, Inc., reserves the right to change products or specifications without notice.
A
0.25
t
Min
200
0.9
0.4
0.4
QH -
60
75
15
15
15
15
75
0
1
0
≤ +70°C; V
-262
t
DQSQ
Max
70.3
15.6
1.1
0.6
0.6
©2003, 2004, 2005 Micron Technology, Inc. All rights reserved.
DD
Electrical Specifications
= V
0.25
Min
t
200
0.9
0.4
0.4
QH -
65
75
20
20
15
15
75
-26A/-265
0
1
0
DD
Q = +2.5V ±0.2V
t
DQSQ
Max
70.3
1.1
0.6
0.6
7.8
Units
t
t
t
t
t
t
ns
ns
ns
ns
CK
CK
ns
CK
ns
CK
ns
CK
ns
µs
µs
ns
ns
CK
Notes
18, 19
43
38
38
17
22
21
21