MT4LSDT864HY-133G2 Micron Technology Inc, MT4LSDT864HY-133G2 Datasheet - Page 12

• Manufacturer Part Number: MT4LSDT864HY-133G2
• Description: MODULE SDRAM 64MB 144-SODIMM
• Manufacturer: Micron Technology Inc

Specifications of MT4LSDT864HY-133G2

• Memory Type: SDRAM
• Memory Size: 64MB
• Speed: 133MHz
• Package / Case: 144-SODIMM
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Absolute Maximum Ratings
nent damage to the device. This is a stress rating only,
and functional operation of the device at these or any
other conditions above those indicated in the opera-
Table 9:
Notes: 1, 5, 6; notes appear on page 16; V
Table 10: I
Notes: 1, 5, 6, 11, 13; notes appear on page 16; V
09005aef80748a77
SD4C4_8_16X64HG.fm - Rev. C 6/04 EN
PARAMETER/CONDITION
OPERATING CURRENT: Active Mode; Burst = 2; READ or
WRITE;
STANDBY CURRENT: Power-Down Mode; All device device
banks idle; CKE = LOW
STANDBY CURRENT: Active Mode; CKE = HIGH; CS# = HIGH;
All device banks active after
progress
OPERATING CURRENT: Burst Mode; Continuous burst; READ
or WRITE; All device banks active
AUTO REFRESH CURRENT
CKE = HIGH; S# = HIGH
SELF REFRESH CURRENT: CKE
(Low power not available with industrial
temperature option)
PARAMETER/CONDITION
SUPPLY VOLTAGE
INPUT HIGH VOLTAGE: Logic 1; All inputs
INPUT LOW VOLTAGE: Logic 0; All inputs
INPUT LEAKAGE CURRENT:
Any input 0V
(All other pins not under test = 0V)
OUTPUT LEAKAGE CURRENT: DQ pins are
disabled; 0V
OUTPUT LEVELS:
Output High Voltage (I
Output Low Voltage (I
Stresses greater than those listed may cause perma-
Voltage on V
Voltage on Inputs, NC or I/O Pins
Relative to Vss . . . . . . . . . . . . . . . . . . . . -1V to +4.6V
Relative to Vss . . . . . . . . . . . . . . . . . . . . -1V to +4.6V
t
RC =
t
RC (MIN)
V
DC Electrical Characteristics and Operating Conditions
DD
V
OUT
DD
IN
Supply
Specifications and Conditions – 32MB
V
V
OUT
DD
OUT
DD
Q
= 4mA)
= -4mA)
t
RCD met; No accesses in
0.2V
DD
t
t
RFC =
RFC = 15.625µs
, V
Low Power (L)
DD
Standard
DD
Q = +3.3V ±0.3V
t
RFC (MIN)
Command and
Address Inputs
CK, S#
DQMB
DQ
, V
DD
Q = +3.3V ±0.3V
12
SYMBOL
tional sections of this specification is not implied.
Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
I
I
I
I
I
I
I
I
DD
DD
DD
DD
DD
DD
DD
DD
Operating Temperature
Storage Temperature (plastic) . . . . . . -55°C to +150°C
1
2
3
4
5
6
7
7
32MB, 64MB, 128MB (x64, SR)
V
SYMBOL
T
T
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD
OPR
OPR
V
V
V
, V
I
V
OZ
OH
I
OL
IH
IL
I
-13E
DD
(Commercial - ambient) . . . . . 0°C to + 65°C
(Industrial - ambient) . . . . . . --40°C to +85°C
500
180
600
920
12
8
4
2
144-PIN SDRAM SODIMM
Q
MAX
MIN
-0.3
-133
-20
-20
2.4
460
180
560
840
-5
-5
12
3
2
–
8
4
2
-10E
V
MAX
380
140
480
760
12
3.6
DD
0.3
0.8
0.4
8
4
2
20
20
5
5
–
+
©2004 Micron Technology, Inc. All rights reserved.
UNITS
mA
mA
mA
mA
mA
mA
mA
mA
UNITS
µA
µA
µA
µA
V
V
V
V
V
3, 18, 19, 29
3, 12, 19, 29
3, 18, 19, 29
3, 12, 18,
19, 29,30
NOTES
NOTES
29
3
22
22
33
33