HYS72T128000HR-3S-B Qimonda, HYS72T128000HR-3S-B Datasheet - Page 15

MODULE DDR2 1GB 240-DIMM

HYS72T128000HR-3S-B

Manufacturer Part Number
HYS72T128000HR-3S-B
Description
MODULE DDR2 1GB 240-DIMM
Manufacturer
Qimonda
Datasheet

Specifications of HYS72T128000HR-3S-B

Memory Type
DDR2 SDRAM
Memory Size
1GB
Speed
333MHz
Package / Case
240-DIMM
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
675-1028
3.2
This chapter describes the DC characteristics.
1) Under all conditions,
2) Peak to peak AC noise on
3) Input voltage for any connector pin under test of 0 V ≤
1) DRAM Component Case Temperature is the surface temperature in the center on the top side of any of the DRAMs.
2) Within the DRAM Component Case Temperature Range all DRAM specifications will be supported.
3) Above 85 °C DRAM Case Temperature the Auto-Refresh command interval has to be reduced to
4) When operating this product in the 85 °C to 95 °C
5) Up to 3000 m
Rev. 1.2, 2007-01
03292006-JXZQ-CG6T
Parameter
Device Supply Voltage
Output Supply Voltage
Input Reference Voltage
SPD Supply Voltage
DC Input Logic High
DC Input Logic Low
In / Output Leakage Current
Parameter
Operating temperature (ambient)
DRAM Case Temperature
Storage Temperature
Barometric Pressure (operating & storage)
Operating Humidity (relative)
setting EMR(2) bit A7 to “1”. When the High Temperature Self Refresh is enabled there is an increase of
DC Characteristics
V
DDQ
must be less than or equal to
V
REF
may not exceed ± 2%
Symbol
V
V
V
V
V
V
I
L
DD
DDQ
REF
DDSPD
IH(DC)
IL (DC
)
T
CASE
Values
Min.
1.7
1.7
0.49 ×
1.7
V
– 0.30
– 5
V
V
REF
REF
IN
V
temperature range, the High Temperature Self Refresh has to be enabled by
Symbol
T
T
T
PBar
H
DD
OPR
CASE
STG
OPR
+ 0.125
(DC).
V
.
V
DDQ
DDQ
15
V
Supply Voltage Levels and DC Operating Conditions
+ 0.3 V; all other pins at 0 V. Current is per pin.
REF
is also expected to track noise in
Typ.
1.8
1.8
0.5 ×
Values
Min.
0
0
– 50
+69
10
V
DDQ
HYS72T[64/128/256]xxxHR–[3S/3.7/5]–B
Max.
+65
+95
+100
+105
90
240-Pin Registered DDR2 SDRAM
Max.
1.9
1.9
0.51 ×
3.6
V
V
5
DDQ
REF
t
REFI
– 0.125
+ 0.3
V
= 3.9 µs
DDQ
V
I
DDQ
DD6
Operating Conditions
Unit
°C
°C
°C
kPa
%
.
by approximately 50%.
Internet Data Sheet
Unit
V
V
V
V
V
V
µA
TABLE 10
TABLE 11
Note
1)2)3)4)
5)
Note
1)
2)
3)

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