TC58V64BDC Toshiba, TC58V64BDC Datasheet - Page 5

• Manufacturer Part Number: TC58V64BDC
• Description: IC 64MBIT NAND FLASH 3V 44-TSOP
• Manufacturer: Toshiba

Specifications of TC58V64BDC

• Memory Size: 8MB
• Memory Type: EEPROM - Smart Media
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

PROGRAMMING AND ERASING CHARACTERISTICS
(Ta = = = = 0°~55°C, V
RY
Note: (1) CE High to Ready time depends on the pull-up resistor tied to the
t
N
t
(1): Refer to Application Note (11) toward the end of this document.
PROG
BERASE
/
SYMBOL
RE
CE
BY
(2) Sequential Read is terminated when t
(Refer to Application Note (8) toward the end of this document.)
delay is less than 30 ns,
Programming Time
Number of Programming Cycles on Same
Page
Block Erasing Time
525
CC
= = = = 3.3 V ± ± ± ± 0.3 V)
PARAMETER
526
RY
/
BY
signal stays Ready.
527
CEH
A
MIN
is greater than or equal to 100 ns. If the RE to CE
¾
¾
¾
t
CEH
Busy
200 to 300
³ 100 ns
t
CRY
TYP.
¾
2
A
: 0 to 30 ns ® Busy signal is not
RY
1000
MAX
10
*
5
/
BY
pin.
2001-10-24 5/33
output.
*: V
TC58V64BDC
UNIT
ms
ms
IH
or V
IL
NOTES
(1)