TC58V64BDC Toshiba, TC58V64BDC Datasheet - Page 3

• Manufacturer Part Number: TC58V64BDC
• Description: IC 64MBIT NAND FLASH 3V 44-TSOP
• Manufacturer: Toshiba

Specifications of TC58V64BDC

• Memory Size: 8MB
• Memory Type: EEPROM - Smart Media
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

VALID BLOCKS
RECOMMENDED DC OPERATING CONDITIONS
DC CHARACTERISTICS
N
(1) The TC58V64B occasionally contains unusable blocks. Refer to Application Note (13) toward the end of this document.
V
V
V
*
I
I
I
I
I
I
I
I
I
I
V
V
I
IL
LO
CCO1
CCO3
CCO4
CCO5
CCO7
CCO8
CCS1
CCS2
OL
VB
CC
IH
IL
OH
OL
SYMBOL
SYMBOL
SYMBOL
(
-2 V (pulse width lower than 20 ns)
RY
/
BY
)
Number of Valid Blocks
Power Supply Voltage
High Level input Voltage
Low Level Input Voltage
Input Leakage Current
Output Leakage Current
Operating Current (Serial Read)
Operating Current
(Command Input)
Operating Current (Data Input)
Operating Current
(Address Input)
Programming Current
Erasing Current
Standby Current
Standby Current
High Level Output Voltage
Low Level Output Voltage
Output Current of
(1)
PARAMETER
RY
(Ta = = = = 0°~55°C, V
PARAMETER
PARAMETER
/
BY
pin
V
V
ns
t
t
t
I
I
V
CE = V
CE = V
CE = V
cycle
cycle
cycle
OH
OL
IN
OUT
OL
= 2.1 mA
= 0 V to V
= -400 mA
= 0.4 V
= 50 ns
= 50 ns
= 50 ns
= 0.4 V to V
CC
IH
CC
IL
, I
- 0.2 V
= = = = 3.3 V ± ± ± ± 0.3 V)
CONDITION
OUT
CC
CC
= 0 mA, t
¾
¾
-0.3*
1014
MIN
MIN
cycle
3.0
2.0
= 50
TYP.
MIN
TYP.
2.4
3.3
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
TYP.
¾
¾
10
10
10
10
10
10
¾
¾
¾
¾
V
8
2001-10-24 3/33
CC
TC58V64BDC
MAX
1024
MAX
3.6
0.8
+ 0.3
MAX
±10
±10
100
0.4
30
30
30
30
30
30
¾
¾
1
Blocks
UNIT
UNIT
V
V
V
UNIT
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
V
V