TLV431ASN1T1G ON Semiconductor, TLV431ASN1T1G Datasheet - Page 2

• Manufacturer Part Number: TLV431ASN1T1G
• Description: IC REG SHUNT ADJ 1.24V SOT23
• Manufacturer: ON Semiconductor

Specifications of TLV431ASN1T1G

• Reference Type: Shunt, Adjustable
• Voltage - Output: 1.24 ~ 16 V
• Tolerance: ±1%
• Number Of Channels: 1
• Current - Cathode: 55µA
• Current - Output: 20mA
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Product: Voltage References
• Topology: Shunt References
• Output Voltage: Adjustable
• Initial Accuracy: 1 %
• Series Vref - Input Voltage (max): 18 V
• Shunt Current (max): 20 mA
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Mounting Style: SMD/SMT
• Shunt Current (min): 0.08 mA
• Fixed / Adjust / Prog: Adjust
• Output Voltage (max): 1.24 to 16V
• Reference Voltage Accuracy (max): 1
• Input Voltage (max): 18V
• Operating Temp Range: -40C to 85C
• Operating Temperature Classification: Industrial
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SOT-23
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Voltage - Input: -
• Temperature Coefficient: -
• Current - Quiescent: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: TLV431ASN1T1GOS; TLV431ASN1T1GOS; TLV431ASN1T1GOSTR

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
NOTE:
MAXIMUM RATINGS
RECOMMENDED OPERATING CONDITIONS
Reference (R)
Cathode to Anode Voltage
Cathode Current
Cathode to Anode Voltage
Cathode Current Range, Continuous
Reference Input Current Range, Continuous
Thermal Characteristics
Operating Junction Temperature
Operating Ambient Temperature Range
Storage Temperature Range
LP Suffix Package, TO−92−3 Package
SN Suffix Package, TSOP−5 Package
SN1 Suffix Package, SOT−23−3 Package
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Ambient
This device series contains ESD protection and exceeds the following tests: Human Body Model 2000 V per MIL−STD−883,
Method 3015. Machine Model Method 200 V.
Device Symbol
Cathode (K)
Anode (A)
P
D
(Full operating ambient temperature range applies, unless otherwise noted)
+
T
Figure 2. Representative Device Symbol and Schematic Diagram
J(max)
R
qJA
Condition
Rating
* T
Reference (R)
A
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2
The device contains 13 active transistors.
Cathode (K)
Anode (A)
Symbol
Symbol
V
R
R
R
R
I
V
T
KA
K
I
T
T
I
ref
qJA
qJC
qJA
qJA
stg
KA
K
A
J
Min
V
0.1
ref
*0.05 to 10
*65 to 150
*40 to 85
−20 to 25
Value
178
226
491
150
18
83
Max
16
20
Unit
mA
mA
C/W
V
C
C
C
Unit
mA
V