BTS5235-2G Infineon Technologies, BTS5235-2G Datasheet - Page 16

• Manufacturer Part Number: BTS5235-2G
• Description: IC PWR SWITCH HISIDE PGDSO-20-43
• Manufacturer: Infineon Technologies
• Type: High Sider

Specifications of BTS5235-2G

• Package / Case: DSO-20
• Input Type: Non-Inverting
• Number Of Outputs: 2
• On-state Resistance: 45 mOhm
• Current - Output / Channel: 3.3A
• Current - Peak Output: 28A
• Voltage - Supply: 4.5 V ~ 28 V
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• On Resistance (max): 0.045 Ohms
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 40 C
• Maximum Power Dissipation: 1400 mW
• Mounting Style: SMD/SMT
• Supply Current: 3.6 mA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: BTS5235-2GINTR; BTS52352GXT; SP000281079

6.2
In case of reverse polarity, the intrinsic body diode causes power dissipation. Additional power is dissipated by the
integrated ground resistor. Use following formula for estimation of total power dissipation P
polarity mode.
P
The reverse current through the intrinsic body diode has to be limited by the connected load. The current through
sense pins IS1 and IS2 has to be limited (please refer to maximum ratings on
ground pin (GND) is limited internally by R
polarity.
6.3
In addition to the output clamp for inductive loads as described in
over voltage protection. Because of the integrated ground resistor, over voltage protection does not require
external components.
As shown in
voltage across logic part is clamped. As a result, the internal ground potential rises to V
zener diodes, the potential at pin IN1, IN2 and SEN rises almost to that potential, depending on the impedance of
the connected circuitry.
Figure 12
6.4
In case of complete loss of the device ground connections, but connected load ground, the BTS5235-2G securely
changes to or stays in off state.
Data Sheet
diss(rev)
=
all channels
Reverse Polarity Protection
Over Voltage Protection
Over Voltage Protection
Loss of Ground Protection
Figure
∑
V
DS(rev)
IN
IS
SEN R
12, in case of supply voltages greater than V
ZD
R
ESD
SEN
I
IN
L
+
------------- -
R
V
GND
bb
2
internal ground
logic
GND
. The over-temperature protection is not active during reverse
ZD
R
GND
AZ
GND
16
VBB
bb(AZ)
Section
OUT
, the power transistor switches on and the
Smart High-Side Power Switch
V
5.1.3, there is a clamp mechanism for
OUT
Page
OverVoltage .emf
8). The current through the
bb
- V
Protection Functions
bb(AZ)
Rev.1.1, 2007-09-01
diss(rev)
. Due to the ESD
BTS5235-2G
in reverse
(3)