BTS5235-2G Infineon Technologies, BTS5235-2G Datasheet - Page 10

• Manufacturer Part Number: BTS5235-2G
• Description: IC PWR SWITCH HISIDE PGDSO-20-43
• Manufacturer: Infineon Technologies
• Type: High Sider

Specifications of BTS5235-2G

• Package / Case: DSO-20
• Input Type: Non-Inverting
• Number Of Outputs: 2
• On-state Resistance: 45 mOhm
• Current - Output / Channel: 3.3A
• Current - Peak Output: 28A
• Voltage - Supply: 4.5 V ~ 28 V
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• On Resistance (max): 0.045 Ohms
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 40 C
• Maximum Power Dissipation: 1400 mW
• Mounting Style: SMD/SMT
• Supply Current: 3.6 mA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: BTS5235-2GINTR; BTS52352GXT; SP000281079

5
5.1
The power stages are built by N-channel vertical power MOSFETs (DMOS) with charge pumps.
5.1.1
The on-state resistance
shows that dependencies for the typical on-state resistance. The behavior in reverse polarity mode is described
in
Figure 4
5.1.2
Figure 5
components obsolete. The current sink to ground ensures that the device switches off in case of open input pin.
The zener diode protects the input circuit against ESD pulses.
Figure 5
Data Sheet
Section
shows the input circuit of the BTS5235-2G. There is an integrated input resistor that makes external
6.2.
Block Description and Electrical Characteristics
Power Stages
Output On-State Resistance
Typical On-State Resistance
Input Circuit
Input Circuit (IN1 and IN2)
90
80
70
60
50
40
30
-50 -25
R
DS(ON)
IN
0
R
V
IN
bb
depends on the supply voltage as well as the junction temperature
25
= 13.5 V
T / C
50
I
R
GND
IN
75 100 125 150
GND
10
Block Description and Electrical Characteristics
160
140
120
100
80
60
40
0
Smart High-Side Power Switch
5
10
T
j
= 25 C
Input.emf
V
bb
15
/V
20
Rev.1.1, 2007-09-01
25
BTS5235-2G
T
j
.
Figure 4