MT48H4M16LFB4-8 IT Micron Technology Inc, MT48H4M16LFB4-8 IT Datasheet - Page 49

• Manufacturer Part Number: MT48H4M16LFB4-8 IT
• Description: IC SDRAM 64MBIT 125MHZ 54VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT48H4M16LFB4-8 IT

• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 64M (4M x 16)
• Speed: 125MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 54-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NOTE:
NOTE:
pdf: 09005aef80a63953, source: 09005aef808a7edc
Y25L_64Mb_2.fm - Rev. E 11/04 EN
1. For this example, the burst length = 1, and the WRITE burst is followed by a “manual” PRECHARGE.
2. 15ns is required between <D
3. A9 and A11 = “Don’t Care.”
4. PRECHARGE command not allowed else
1. CAS latency indicated in parentheses.
SYMBOL
t
t
t
t
AC (3)
AC (2)
CK (3)
CK (2)
t
t
t
t
CKH
t
t
CKS
AH
CH
AS
CL
DQMU, DQML
COMMAND
A0-A9, A11
BA0, BA1
1
CKE
A10
CLK
DQ
MIN
2.5
9.6
2.5
1
3
3
8
1
t CMS
t CKS
t AS
t AS
t AS
ACTIVE
-8
T0
ROW
ROW
BANK
MAX
t CKH
t CMH
t AH
t AH
t AH
100
100
7
8
Figure 45: Single WRITE – Without Auto Precharge
t RCD
t RAS
t RC
t CK
MIN
2.5
9.6
2.5
12
T1
1
3
3
1
NOP
IN
-10
m> and the PRECHARGE command, regardless of frequency.
DISABLE AUTO PRECHARGE
MAX
100
100
t CMS
t CL
7
8
t DS
COLUMN m 3
WRITE
BANK
T2
D
IN
t CMH
t CH
t DH
m
t
UNITS
t WR
RAS would be violated.
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
2
NOP 4
T3
49
NOP 4
SYMBOL
T4
t
t
WR (m)
WR (a)
t
t
t
t
CMH
CMS
t
t
RAS
t
RCD
t
DH
DS
RC
RP
Micron Technology, Inc., reserves the right to change products or specifications without notice.
SINGLE BANK
PRECHARGE
ALL BANKS
T5
BANK
1 CLK
+7ns
MIN
2.5
2.5
48
80
19
19
15
1
1
-8
t RP
T6
NOP
120,000
MAX
MOBILE SDRAM
ACTIVE
BANK
ROW
T7
©2003 Micron Technology, Inc. All rights reserved.
1 CLK
+5ns
MIN
100
2.5
2.5
50
20
20
15
1
1
1
64Mb: x16
-10
NOP
120,000
T8
MAX
DON’T CARE
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
–