M25P40-VMP6TG NUMONYX, M25P40-VMP6TG Datasheet - Page 41

IC FLASH 4MBIT 50MHZ 8VFQFPN

M25P40-VMP6TG

Manufacturer Part Number
M25P40-VMP6TG
Description
IC FLASH 4MBIT 50MHZ 8VFQFPN
Manufacturer
NUMONYX
Series
Forté™r
Datasheet

Specifications of M25P40-VMP6TG

Format - Memory
FLASH
Memory Type
FLASH
Memory Size
4M (512K x 8)
Speed
50MHz
Interface
SPI, 3-Wire Serial
Voltage - Supply
2.3 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
8-VFQFN, 8-VFQFPN
Memory Configuration
512K X 8
Ic Interface Type
Serial, SPI
Clock Frequency
50MHz
Supply Voltage Range
2.3V To 3.6V
Memory Case Style
VDFPN
No. Of Pins
8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Table 17.
1. 150 nm technology devices are identified by process identification digit "X" in the device marking.
2. When using the Page Program (PP) instruction to program consecutive bytes, optimized timings are
Table 18.
1. Output Hi-Z is defined as the point where data out is no longer driven.
Figure 21. AC measurement I/O waveform
Symbol
Symbol
t
PP
obtained with one sequence including all the bytes versus several sequences of only a few bytes. (1 ≤ n ≤
256)
t
t
t
SE
BE
W
C
(2)
L
Load capacitance
Input rise and fall times
Input pulse voltages
Input timing reference voltages
Output timing reference voltages
Alt.
AC measurement conditions
Instruction times, process technology 150 nm
Write Status Register cycle time
Page Program cycle time (256 bytes)
Page Program cycle time (n bytes)
Sector Erase cycle time
Bulk Erase cycle time
0.8V CC
0.2V CC
Input Levels
Test conditions specified in
Parameter
Parameter
Table 10
Timing Reference Levels
Input and Output
and
Min.
Min.
0.2V
0.3V
Table 18
(1)
CC
CC
V
0.7V CC
0.5V CC
0.3V CC
AI07455
CC
0.4+n*1/
30
to 0.8V
to 0.7V
256
Typ.
/ 2
1.4
4.5
5
1
(2)
Max.
CC
CC
5
Max.
15
10
5
3
Unit
pF
ns
Unit
V
V
V
ms
ms
41/61
s
s

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