MT48H16M32LFCM-6 L IT:B Micron Technology Inc, MT48H16M32LFCM-6 L IT:B Datasheet - Page 54
![no-image](/images/manufacturer_photos/0/4/441/micron_technology_inc_sml.jpg)
MT48H16M32LFCM-6 L IT:B
Manufacturer Part Number
MT48H16M32LFCM-6 L IT:B
Description
IC SDRAM 512MBIT 166MHZ 90VFBGA
Manufacturer
Micron Technology Inc
Datasheet
1.MT48H32M16LFBF-75B_TR.pdf
(86 pages)
Specifications of MT48H16M32LFCM-6 L IT:B
Format - Memory
RAM
Memory Type
Mobile SDRAM
Memory Size
512M (16M x 32)
Speed
166MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.95 V
Operating Temperature
-40°C ~ 85°C
Package / Case
90-VFBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
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Figure 24: READ Continuous Page Burst
Command
PDF: 09005aef82ea3742
512mb_mobile_sdram_y47m.pdf – Rev. H 12/09 EN
BA0, BA1
Address
DQM
CKE
A10
CLK
DQ
t CMS
t CKS
t AS
t AS
t AS
ACTIVE
Row
Row
Bank
T0
t CKH
t CMH
t AH
t AH
t AH
t RCD
t CL
T1
Note:
NOP
t CH
t CMS
1. For this example, CL = 2.
t CK
Column m
Bank
T2
READ
t CMH
CAS latency
T3
NOP
t LZ
t AC
512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM
T4
NOP
D
OUT
t OH
t AC
54
All locations within same row
T5
Full-page burst does not self-terminate.
D
NOP
Can use BURST TERMINATE command.
OUT
t OH
Micron Technology, Inc. reserves the right to change products or specifications without notice.
t AC
Full page completed
T6
NOP
D
OUT
t OH
t AC
(
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(
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(
(
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(
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(
(
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Tn + 1
NOP
D
OUT
t OH
t AC
© 2007 Micron Technology, Inc. All rights reserved.
BURST TERM
Tn + 2
READ Operation
D
OUT
t OH
t AC
Tn + 3
NOP
D
OUT
t OH
t HZ
Don’t Care
Undefined
Tn + 4
NOP
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