MT48LC4M32B2TG-7:G Micron Technology Inc, MT48LC4M32B2TG-7:G Datasheet - Page 36

IC SDRAM 128MBIT 143MHZ 86TSOP

MT48LC4M32B2TG-7:G

Manufacturer Part Number
MT48LC4M32B2TG-7:G
Description
IC SDRAM 128MBIT 143MHZ 86TSOP
Manufacturer
Micron Technology Inc
Type
SDRAMr
Datasheet

Specifications of MT48LC4M32B2TG-7:G

Format - Memory
RAM
Memory Type
SDRAM
Memory Size
128M (4Mx32)
Speed
143MHz
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
86-TSOPII
Organization
4Mx32
Density
128Mb
Address Bus
14b
Access Time (max)
17/8/5.5ns
Maximum Clock Rate
143MHz
Operating Supply Voltage (typ)
3.3V
Package Type
TSOP-II
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
3V
Supply Current
175mA
Pin Count
86
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MT48LC4M32B2TG-7:G
Manufacturer:
micron
Quantity:
415
Part Number:
MT48LC4M32B2TG-7:G
Manufacturer:
MICRONAS
Quantity:
20 000
Figure 29:
Figure 30:
PDF: 09005aef80872800/Source: 09005aef80863355
128MbSDRAMx32_2.fm - Rev. L 1/09 EN
WRITE With Auto Precharge Interrupted by a READ
WRITE With Auto Precharge Interrupted by a WRITE
Notes:
Notes:
1. DQM is LOW.
1. DQM is LOW.
Internal
States
Internal
States
COMMAND
COMMAND
ADDRESS
ADDRESS
BANK m
BANK m
BANK n
BANK n
CLK
CLK
DQ
DQ
Page Active
Page Active
T0
NOP
T0
NOP
WRITE - AP
WRITE - AP
BANK n,
BANK n,
Page Active
Page Active
BANK n
BANK n
COL a
COL a
T1
T1
D
D
a
a
IN
IN
WRITE with Burst of 4
WRITE with Burst of 4
36
a + 1
a + 1
T2
T2
D
D
NOP
NOP
IN
IN
BANK m,
READ - AP
Micron Technology, Inc., reserves the right to change products or specifications without notice.
a + 2
T3
COL d
T3
BANK m
D
NOP
IN
Interrupt Burst, Write-Back
t
WR - BANK n
READ with Burst of 4
BANK m,
WRITE - AP
COL d
T4
T4
BANK m
CL = 3 (BANK m)
D
NOP
t
d
IN
Interrupt Burst, Write-Back
WR - BANK n
WRITE with Burst of 4
T5
T5
d + 1
NOP
NOP
D
IN
Precharge
t
RP - BANK n
T6
T6
d + 2
D
NOP
D
NOP
OUT
t RP - BANK n
d
IN
Precharge
©2001 Micron Technology, Inc. All rights reserved.
128Mb: x32 SDRAM
Register Definition
DON’T CARE
DON’T CARE
T7
T7
d + 3
D
d + 1
NOP
NOP
D
t WR - BANK m
OUT
t RP - BANK m
IN
Write-Back

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