MT48H16M32LFCM-75:B TR Micron Technology Inc, MT48H16M32LFCM-75:B TR Datasheet - Page 66
![IC SDRAM 512MBIT 133MHZ 90VFBGA](/photos/7/23/72313/mfg557-90-vfbga_sml.jpg)
MT48H16M32LFCM-75:B TR
Manufacturer Part Number
MT48H16M32LFCM-75:B TR
Description
IC SDRAM 512MBIT 133MHZ 90VFBGA
Manufacturer
Micron Technology Inc
Datasheet
1.MT48H32M16LFBF-75B_TR.pdf
(86 pages)
Specifications of MT48H16M32LFCM-75:B TR
Format - Memory
RAM
Memory Type
Mobile SDRAM
Memory Size
512M (16M x 32)
Speed
133MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.95 V
Operating Temperature
0°C ~ 70°C
Package / Case
90-VFBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
557-1388-2
- Current page: 66 of 86
- Download datasheet (3Mb)
Figure 36: READ With Auto Precharge Interrupted by a WRITE
PDF: 09005aef82ea3742
512mb_mobile_sdram_y47m.pdf – Rev. H 12/09 EN
Internal
States
Command
Note:
Address
Bank m
Bank n
DQM
CLK
DQ
1
1. DQM is HIGH at T2 to prevent D
active
Page
READ - AP
Bank n,
Bank n
T0
Col a
READ with burst of 4
Page active
NOP
CL = 3 (bank n)
T1
512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM
T2
NOP
66
T3
D
NOP
OUT
OUT
a + 1 from contending with D
Micron Technology, Inc. reserves the right to change products or specifications without notice.
WRITE - AP
Bank m,
Col d
T4
Bank m
D
Interrupt burst, precharge
IN
WRITE with burst of 4
T5
NOP
D
t
RP - bank n
IN
PRECHARGE Operation
T6
NOP
D
IN
© 2007 Micron Technology, Inc. All rights reserved.
IN
d at T4.
T7
NOP
D
t WR - bank m
Don’t Care
IN
Write-back
Idle
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