K4S511633F-F1H SAMSUNG [Samsung semiconductor], K4S511633F-F1H Datasheet - Page 6

• Manufacturer Part Number: K4S511633F-F1H
• Description: 8M x 16Bit x 4 Banks Mobile SDRAM
• Manufacturer: SAMSUNG [Samsung semiconductor]

K4S511633F-Y(P)C/L/F
AC OPERATING TEST CONDITIONS
Output
AC input levels (Vih/Vil)
Input timing measurement reference level
Input rise and fall time
Output timing measurement reference level
Output load condition
Figure 1. DC Output Load Circuit
870Ω
Parameter
VDDQ
1200Ω
30pF
VOH (DC) = 2.4V, IOH = -2mA
VOL (DC) = 0.4V, IOL = 2mA
(V
DD
= 2.7V ∼ 3.6V, T
6
Output
See Figure 2
tr/tf = 1/1
2.4/0.4
Value
A
1.4
1.4
= -25 to 70°C )
Figure 2. AC Output Load Circuit
Z0=50Ω
Mobile-SDRAM
Vtt=0.5 x VDDQ
50Ω
30pF
September 2004
Unit
ns
V
V
V