K4S511633F-F1H SAMSUNG [Samsung semiconductor], K4S511633F-F1H Datasheet - Page 10

• Manufacturer Part Number: K4S511633F-F1H
• Description: 8M x 16Bit x 4 Banks Mobile SDRAM
• Manufacturer: SAMSUNG [Samsung semiconductor]

K4S511633F-Y(P)C/L/F
A. MODE REGISTER FIELD TABLE TO PROGRAM MODES
Register Programmed with Normal MRS
Normal MRS Mode
Register Programmed with Extended MRS
EMRS for PASR(Partial Array Self Ref.) & DS(Driver Strength)
NOTES:
1.RFU(Reserved for future use) should stay "0" during MRS cycle.
2.If A9 is high during MRS cycle, "Burst Read Single Bit Write" function will be enabled.
Function
Function
A8
A9
Address
0
0
1
1
0
1
Address
BA1
A12~A10/AP
0
0
1
1
Write Burst Length
A7
0
1
0
1
0
Test Mode
BA0
Mode Register Set
0
1
0
1
BA1
Single Bit
Mode Select
Length
"0" Setting for
Burst
Normal MRS
Reserved
Reserved
Reserved
BA0 ~ BA1
Mode Select
Type
EMRS for Mobile SDRAM
BA0
A9
0
Normal MRS
Reserved
Reserved
Reserved Address
Mode
A12 ~ A10/AP
A6
0
0
0
0
1
1
1
1
A8
A12 ~ A10/AP
0
RFU
A5
0
0
1
1
0
0
1
1
CAS Latency
*1
A4
A7
0
1
0
1
0
1
0
1
RFU
0
A9
A6
0
0
1
1
*1
Reserved
Reserved
Reserved
Reserved
Reserved
Latency
W.B.L
A9
Driver Strength
A5
0
1
0
1
1
2
3
*2
A8
A4
0
Driver Strength
A8
Test Mode
BA1 BA0
Reserved
Reserved
A3
0
1
0
A7
10
Full
1/2
Mode Select
Burst Type
A7
A3
0
0
Sequential
Interleave
A6
Type
mal MRS
for Nor-
Setting
A6
DS
Mode
A2
CAS Latency
0
0
0
0
1
1
1
1
A5
A5
A1
0
0
1
1
0
0
1
1
A2
0
0
0
0
1
1
1
1
A4
RFU
A4
A0
0
1
0
1
0
1
0
1
A1
0
0
1
1
0
0
1
1
Full Page Length x16 : 256Mb(512)
*1
A3
Mobile-SDRAM
A0
PASR
A3
BT
Burst Length
Size of Refreshed Array
0
1
0
1
0
1
0
1
1/2 of Full Array
1/4 of Full Array
Reserved
Reserved
Reserved
Full Page
A2
BT=0
A2
Full Array
Reserved
Reserved
Reserved
Reserved
Reserved
1
2
4
8
Burst Length
September 2004
PASR
A1
A1
Reserved
Reserved
Reserved
Reserved
BT=1
1
2
4
8
A0
A0