K4S511633F-F1H SAMSUNG [Samsung semiconductor], K4S511633F-F1H Datasheet - Page 4

• Manufacturer Part Number: K4S511633F-F1H
• Description: 8M x 16Bit x 4 Banks Mobile SDRAM
• Manufacturer: SAMSUNG [Samsung semiconductor]

K4S511633F-Y(P)C/L/F
ABSOLUTE MAXIMUM RATINGS
NOTES:
Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
DC OPERATING CONDITIONS
Recommended operating conditions (Voltage referenced to V
NOTES :
1. VIH (max) = 5.3V AC.The overshoot voltage duration is ≤ 3ns.
2. VIL (min) = -2.0V AC. The undershoot voltage duration is ≤ 3ns.
3. Any input 0V ≤ VIN ≤ VDDQ.
4. Dout is disabled, 0V ≤ VOUT ≤ VDDQ.
CAPACITANCE
Supply voltage
Input logic high voltage
Input logic low voltage
Output logic high voltage
Output logic low voltage
Input leakage current
Clock
RAS, CAS, WE, CS, CKE
DQM
Address
DQ
Voltage on any pin relative to V
Voltage on V
Storage temperature
Power dissipation
Short circuit current
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with tri-state outputs.
0
~ DQ
Parameter
15
Parameter
DD
supply relative to V
Pin
(V
DD
= 1.8V, T
ss
ss
A
= 23°C, f = 1MHz, V
Symbol
V
V
V
V
V
V
DDQ
I
DD
OH
OL
LI
IH
IL
Symbol
C
C
C
C
C
ADD
OUT
CLK
IN
IN
Min
-0.3
2.7
2.7
2.2
2.4
-2
-
REF
SS
V
=0.9V ± 50 mV)
V
Symbol
DD
= 0V, T
IN
T
, V
I
, V
P
STG
OS
D
OUT
DDQ
4
Min
A
3.0
3.0
1.5
3.0
3.0
Typ
3.0
3.0
3.0
= -25 to 70°C)
0
-
-
-
V
DDQ
Max
Max
3.6
3.6
0.5
0.4
6.0
6.0
3.0
6.0
5.0
2
-
+ 0.3
-55 ~ +150
-1.0 ~ 4.6
-1.0 ~ 4.6
Value
1.0
50
Mobile-SDRAM
Unit
uA
V
V
V
V
V
V
Unit
pF
pF
pF
pF
pF
September 2004
I
OH
I
OL
Unit
Note
mA
°C
W
= -2mA
= 2mA
V
V
Note
1
2
3