K4T56043QF-GCD5 SAMSUNG [Samsung semiconductor], K4T56043QF-GCD5 Datasheet - Page 10

• Manufacturer Part Number: K4T56043QF-GCD5
• Description: 256Mb F-die DDR2 SDRAM
• Manufacturer: SAMSUNG [Samsung semiconductor]

256Mb F-die DDR2 SDRAM
Operating Temperature Condition
Input DC Logic Level
Input AC Logic Level
AC Input Test Conditions
Notes:
1.
2.
3.
V
V
SLEW
1. Operating Temperature is the case surface temperature on the center/top side of the DRAM. For the measurement conditions,
2. At 85 - 95 °C operation temperature range, doubling refresh commands in frequency to a 32ms period ( tREFI=3.9 us ) is required,
REF
SWING(MAX)
Symbol
V
Symbol
V
please refer to JESD51.2 standard.
and to enter to self refresh mode at this temperature range, an EMRS command is required to change internal refresh rate.
Input waveform timing is referenced to the input signal crossing through the V
The input signal minimum slew rate is to be maintained over the range from V
from V
AC timings are referenced with input waveforms switching from V
V
Symbol
IH
V
IL
V
IL
Symbol
TOPER
(DC)
IH
(DC)
IL
(AC) on the negative transitions.
(ac)
(ac)
REF
to V
Input reference voltage
Input signal maximum peak to peak swing
Input signal minimum slew rate
ac input logic high
ac input logic low
IL
(AC) max for falling edges as shown in the below figure.
Parameter
DC input logic high
DC input logic low
Parameter
Operating Temperature
Parameter
V
Falling Slew =
SWING(MAX)
Condition
delta TF
V
REF
Min.
V
DDR2-400, DDR2-533
+ 0.250
REF
-
< AC Input Test Signal Waveform >
V
- V
delta TF
REF
IL
(AC) max
- 0.3
Min.
+ 0.125
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V
REF
Max.
Rating
0 to 95
-
- 0.250
V
0.5 * V
1.0
1.0
V
REF
IL
DDQ
delta TR
(AC) to V
Value
Max.
- 0.125
Rising Slew =
DDQ
+ 0.3
V
IH
REF
IH/IL
REF
(AC) on the positive transitions and V
Min.
V
V
V/ns
(AC) level applied to the device under test.
+ 0.200
to V
Units
°C
Units
Units
V
IH
V
V
DDR2-667
IH
(AC) min for rising edges and the range
(AC) min - V
V
V
V
V
V
V
V
delta TR
DDQ
IH
IH
REF
IL
IL
SS
(DC) max
(AC) max
(AC) min
(DC) min
V
REF
1
1
2, 3
Max.
REF
Notes
1, 2
- 0.200
Notes
Rev. 1.5 Feb. 2005
Notes
DDR2 SDRAM
IH
(AC) to