TH50VSF3582AASB TOSHIBA [Toshiba Semiconductor], TH50VSF3582AASB Datasheet - Page 43

• Manufacturer Part Number: TH50VSF3582AASB
• Description: TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS
• Manufacturer: TOSHIBA [Toshiba Semiconductor]

Notes:
TIMING FOR SWITCHING BETWEEN FLASH AND SRAM MODES
(1)
(2)
(3)
(4)
(5)
(6)
Because I/O pins may be in Output state at this point, input signals of the opposite value must not be
If
remain High-Impedance.
If
remain High-Impedance.
If OE is High during a Write cycle, the outputs will remain High-Impedance.
applied.
D
WE remains High during a Read cycle.
OUT
CE2S
CE
CE
CE
CEF
1
S
1
1
6 stops toggling when the last command has been completed.
S
S
goes Low (or CE2S goes High) at the same time as or after WE goes Low, the outputs will
goes High (or CE2S goes Low) at the same time as or before WE goes High, the outputs will
t
CCR
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t
CCR