TH50VSF3582AASB TOSHIBA [Toshiba Semiconductor], TH50VSF3582AASB Datasheet - Page 27

• Manufacturer Part Number: TH50VSF3582AASB
• Description: TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS
• Manufacturer: TOSHIBA [Toshiba Semiconductor]

Common Flash Memory Interface (CFI)
can be obtained via CFI. To read information from the device, input the Query command followed by the address.
In Word mode, DQ8 to DQ15 all output 0s. To exit this mode, input the Reset command.
CFI Code Table
The TH50VSF3582/3583AASB conforms to the CFI. Information on device specifications and characteristics
ADDRESS A6~A0
1AH
1BH
1CH
1DH
1EH
2AH
2BH
10H
12H
13H
14H
15H
16H
17H
18H
19H
1FH
20H
21H
22H
23H
24H
25H
26H
27H
28H
29H
11H
DATA DQ15~DQ0
000AH
0051H
0052H
0059H
0002H
0000H
0040H
0000H
0000H
0000H
0000H
0000H
0027H
0036H
0000H
0000H
0004H
0000H
0000H
0005H
0000H
0004H
0000H
0016H
0002H
0000H
0000H
0000H
Query Unique ASCII string “QRY”
Primary OEM Command Set
Address for Primary Extended Table
Alternate OEM Command Set
Address for Alternate OEM Extended Table
V
V
V
V
Typical timeout per single byte/word write (2
Typical timeout for Min size buffer write (2
Typical timeout per individual block erase (2
Typical timeout for full chip erase (2
Max timeout for byte/word write (2
Max timeout for buffer write (2
Max timeout per individual block erase (2
Max timeout for full chip erase (2
Device Size (2
Flash Device Interface description
Max number of byte in multi-byte write (2
DD
DD
PP
PP
2: AMD/FJ standard type
0: none exists
DQ7~DQ4: 1 V
DQ3~DQ0: 100 mV
DQ7~DQ4: 1 V
DQ3~DQ0: 100 mV
2: ×8/×16
Min voltage
Max voltage
Min (write/erase)
Max (write/erase)
N
byte)
TH50VSF3582/3583AASB
DESCRIPTION
N
times typical)
N
N
times typical)
N
times typical)
ms)
N
N
N
)
times typical)
µs)
N
N
ms)
µs)
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