HYS64T32000HM-37-A Infineon, HYS64T32000HM-37-A Datasheet - Page 17

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HYS64T32000HM-37-A

Manufacturer Part Number
HYS64T32000HM-37-A
Description
Double-Data-Rate-Two SDRAM Micro-DIMM
Manufacturer
Infineon
Datasheet
Preliminary
3
3.1
Table 9
Parameter
Voltage on any pins relative to
Voltage on
Voltage on
Storage Humidity (without condensation)
1) Stresses greater than those listed may cause permanent damage to the device. This is a stress rating only, and device
Table 10
Parameter
Operating temperature (ambient)
DRAM Case Temperature
Storage Temperature
Barometric Pressure (operating & storage)
Operating Humidity (relative)
1) DRAM Component Case Temperature is the surface temperature in the center on the top side of any of the DRAMs. For
2) Within the DRAM Component Case Temperature Range all DRAM specifications will be supported
3) Above 85
4) Self-Refresh period is hard-coded in the DRAMs and therefore it is imperative that the system ensures the DRAM is below
5) Up to 3000 m.
Table 11
Parameter
Device Supply Voltage
Output Supply Voltage
Input Reference Voltage
SPD Supply Voltage
DC Input Logic High
DC Input Logic Low
1) Under all conditions, V
2) Peak to peak AC noise on V
Data Sheet
functional operation at or above the conditions indicated is not implied. Exposure to absolute maximum rating conditions
for extended periods may affect reliability
measurement conditions, please refer to the JEDEC document JESD51-2
85
C Case Temperature before initiating Self-Refresh operation.
V
V
Electrical Characteristics
Operating Conditions
Absolute Maximum Ratings
Operating Conditions
Supply Voltage Levels and DC Operating Conditions
DD
DDQ
C DRAM Case Temperature the Auto-Refresh command interval has to be reduced to
relative to
relative to
DDQ
V
V
must be less than or equal to V
SS
REF
SS
V
Symbol
V
V
V
V
V
V
may not exceed ± 2% V
SS
DD
DDQ
REF
DDSPD
IH (DC)
IL (DC)
Symbol
V
V
V
H
IN
DD
DDQ
STG
,
Limit Values
min.
1.7
1.7
0.49
1.7
V
– 0.30
V
REF
OUT
Symbol
T
T
T
H
OPR
CASE
STG
OPR
+ 0.125
V
REF (DC)
DDQ
17
DD
Double-Data-Rate-Two SDRAM Micro-DIMM
Values
Min.
– 0.5
– 1.0
– 0.5
5
.V
nom.
1.8
1.8
0.5
REF
HYS64T[3200/6402]0[H/K/L]M–[3.7/5]–A
Values
min.
0
0
– 50
105
10
is also expected to track noise in V
V
DDQ
Max.
2.3
2.3
2.3
95
max.
+65
+95
+100
69
90
max.
1.9
1.9
0.51
3.6
V
V
DDQ
REF
Unit
V
V
V
%
– 0.125
+ 0.3
V
Electrical Characteristics
DDQ
Unit
kPa
%
C
C
C
03242004-2CBE-IJ2X
Note/Test
Condition
1)
1)
1)
1)
Unit
V
V
V
V
V
V
Rev. 0.6, 2004-06
DDQ
.
Notes
1)2)3)4)
5)
t
REFI
Notes
1)
2)
= 3.9 s

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