ISPLSI2096VL-100LT128 Lattice Semiconductor, ISPLSI2096VL-100LT128 Datasheet - Page 3

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ISPLSI2096VL-100LT128

Manufacturer Part Number
ISPLSI2096VL-100LT128
Description
2.5V In-System Programmable SuperFAST High Density PLD
Manufacturer
Lattice Semiconductor
Datasheet
Supply Voltage V
Input Voltage Applied ............................. -0.5 to +4.05V
Off-State Output Voltage Applied .......... -0.5 to +4.05V
Storage Temperature ................................ -65 to 150 C
Case Temp. with Power Applied .............. -55 to 125 C
Max. Junction Temp. (T
1. Stresses above those listed under the “Absolute Maximum Ratings” may cause permanent damage to the device. Functional
V
V
V
C
C
C
Absolute Maximum Ratings
DC Recommended Operating Condition
Capacitance (T
Erase Reprogram Specifications
Erase/Reprogram Cycles
operation of the device at these or at any other conditions above those indicated in the operational sections of this specification
is not implied (while programming, follow the programming specifications).
1
2
3
CC
IL
IH
SYMBOL
SYMBOL
Dedicated Input Capacitance
I/O Capacitance
Clock and Global Output Enable Capacitance
cc
PARAMETER
................................ -0.5 to +4.05V
Supply Voltage
Input Low Voltage
Input High Voltage
A
=25 C, f=1.0 MHz)
J
) with Power Applied ... 150 C
PARAMETER
1
PARAMETER
Commercial
Industrial
MINIMUM
3
10,000
Specifications ispLSI 2096VL
T
T
A
A
= 0 C to + 70 C
= -40 C to + 85 C
TYPICAL
10
8
6
MAXIMUM
UNITS
pf
pf
pf
MIN.
-0.3
2.3
2.3
1.7
V = 2.5V, V = 0.0V
V = 2.5V, V = 0.0V
V = 2.5V, V = 0.0V
CC
CC
CC
TEST CONDITIONS
MAX.
2.7
2.7
0.7
3.6
UNITS
Cycles
Table 2-0006/2096VL
Table 2-0005/2096VL
Table 2-0008/2096VL
IN
I/O
Y
UNITS
V
V
V
V

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