FDC6318 Fairchild Semiconductor, FDC6318 Datasheet - Page 4

• Manufacturer Part Number: FDC6318
• Description: Dual P-Channel 1.8V PowerTrench Specified MOSFET
• Manufacturer: Fairchild Semiconductor

Typical Characteristics
0.01
100
0.1
10
Figure 9. Maximum Safe Operating Area.
1
5
4
3
2
1
0
0.1
Figure 7. Gate Charge Characteristics.
0
0.001
0.01
R
SINGLE PULSE
0.1
R
I
D
0.00001
DS(ON)
θJA
V
1
= -2.5A
T
GS
A
= 130
= 25
= -4.5V
LIMIT
D = 0.5
o
o
C/W
C
0.2
-V
0.1
0.05
2
0.02
DS
0.01
, DRAIN-SOURCE VOLTAGE (V)
Q
1
0.0001
g
, GATE CHARGE (nC)
SINGLE PULSE
DC
1s
100ms
V
4
DS
Figure 11. Transient Thermal Response Curve.
10ms
= -4V
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
1ms
0.001
-8V
10
100 µ s
-6V
6
0.01
100
8
t
1
, TIME (sec)
0.1
800
600
400
200
0
20
15
10
5
0
0.001
Figure 8. Capacitance Characteristics.
0
Figure 10. Single Pulse Maximum
1
0.01
C
RSS
-V
Power Dissipation.
3
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
OSS
0.1
C
10
t
1
ISS
, TIME (sec)
P(pk)
Duty Cycle, D = t
6
1
T
R
J
R
θJA
- T
θJA
(t) = r(t) * R
A
= 130
t
= P * R
1
10
t
100
2
o
C/W
9
SINGLE PULSE
R
θJA
θJA
θJA
1
T
FDC6318P Rev D (W)
(t)
/ t
f = 1 MHz
V
100
A
= 130°C/W
GS
= 25°C
2
= 0 V
1000
1000
12