FDC6318 Fairchild Semiconductor, FDC6318 Datasheet
FDC6318
Manufacturer Part Number
FDC6318
Description
Dual P-Channel 1.8V PowerTrench Specified MOSFET
Manufacturer
Fairchild Semiconductor
Datasheet
1.FDC6318.pdf
(5 pages)
Available stocks
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Part Number
Manufacturer
Quantity
Price
Part Number:
FDC6318P
Manufacturer:
ON/安森美
Quantity:
20 000
Company:
Part Number:
FDC6318P-NL
Manufacturer:
FAIRCHILD
Quantity:
2 120
Part Number:
FDC6318P-NL
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
FDC6318P
Dual P-Channel 1.8V PowerTrench
General Description
These P-Channel 1.8V specified MOSFETs are
produced using Fairchild Semiconductor's advanced
PowerTrench process that has been especially tailored
to minimize on-state resistance and yet maintain low
gate charge for superior switching performance.
Applications
• Power management
• Load switch
2001 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
Symbol
V
V
I
P
T
Thermal Characteristics
R
R
Package Marking and Ordering Information
D
J
DSS
GSS
D
θJA
θJC
, T
Device Marking
STG
SuperSOT
.318
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
D1
S1
TM
-6
D2
– Continuous
– Pulsed
FDC6318P
Device
G1
Parameter
S2
G2
T
A
=25
o
C unless otherwise noted
Reel Size
Specified MOSFET
13’’
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1c)
(Note 1)
Features
• –2.5 A, –12 V. R
• High performance trench technology for extremely
• SuperSOT
low R
smaller than standard SO-8); low profile (1mm thick)
DS(ON)
TM
4
5
6
-6 package: small footprint (72%
Tape width
R
R
DS(ON)
DS(ON)
DS(ON)
–55 to +150
12mm
Ratings
–2.5
0.96
–12
130
0.9
0.7
±8
–7
60
= 90 mΩ @ V
= 125 mΩ @ V
= 200 mΩ @ V
December 2001
3
2
1
GS
GS
GS
FDC6318P Rev D (W)
3000 units
= –4.5 V
= –2.5 V
= –1.8 V
Quantity
Units
°C/W
°C/W
°C
W
V
V
A
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FDC6318 Summary of contents
Page 1
... December 2001 = 90 mΩ –4.5 V DS(ON 125 mΩ –2.5 V DS(ON 200 mΩ –1.8 V DS(ON package: small footprint (72 Ratings Units –12 V ±8 V –2.5 A –7 0.96 W 0.9 0.7 –55 to +150 °C °C/W 130 °C/W 60 Tape width Quantity 12mm 3000 units FDC6318P Rev D (W) ...
Page 2
... V 2.3 mV/° mΩ 93 125 135 200 85 120 – 455 pF 194 pF 134 5 1.1 nC 1.3 nC –0.8 A –0.7 –1.2 V (Note 2) c) 180°C/W when mounted on a minimum pad. FDC6318P Rev D (W) ...
Page 3
... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. -2.0V -2.5V -3.0V -3.5V -4. DRAIN CURRENT ( -1. 125 GATE TO SOURCE VOLTAGE ( 125 -55 C 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDC6318P Rev D ( ...
Page 4
... DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 130°C/W θ 25°C A 0.01 0 100 t , TIME (sec) 1 Power Dissipation. R ( θJA θ 130 C/W θJA P(pk (t) θ Duty Cycle 100 1000 FDC6318P Rev D (W) 12 1000 ...
Page 5
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...