FDC6318 Fairchild Semiconductor, FDC6318 Datasheet - Page 3

• Manufacturer Part Number: FDC6318
• Description: Dual P-Channel 1.8V PowerTrench Specified MOSFET
• Manufacturer: Fairchild Semiconductor

Typical Characteristics
1.3
1.2
1.1
0.9
0.8
10
8
6
4
2
0
Figure 3. On-Resistance Variation with
1
8
6
4
2
0
0.5
-50
Figure 1. On-Region Characteristics.
0
Figure 5. Transfer Characteristics.
V
GS
V
V
-3.0V
I
GS
=-4.5V
D
DS
= -2.5A
-25
= -4.5V
= -5V
-V
-V
T
1
0
1
GS
DS
J
, JUNCTION TEMPERATURE (
, GATE TO SOURCE VOLTAGE (V)
, DRAIN TO SOURCE VOLTAGE (V)
Temperature.
-2.5V
25
1.5
50
2
T
-2.0V
A
75
= -55
o
C
-1.8V
100
o
C)
2
3
125
o
C
25
-1.5V
125
o
C
150
2.5
4
Figure 6. Body Diode Forward Voltage Variation
0.001
0.01
0.1
0.26
0.14
0.08
0.02
Figure 2. On-Resistance Variation with
Figure 4. On-Resistance Variation with
10
with Source Current and Temperature.
2.2
1.8
1.6
1.4
1.2
0.8
0.2
1
2
1
0
0
1
V
Drain Current and Gate Voltage.
V
GS
GS
T
= 0V
A
= -1.8V
= 25
Gate-to-Source Voltage.
0.2
-V
o
C
SD
2
, BODY DIODE FORWARD VOLTAGE (V)
-V
T
2
GS
-2.0V
A
T
, GATE TO SOURCE VOLTAGE (V)
= 125
A
0.4
-I
= 125
D
, DRAIN CURRENT (A)
o
C
4
o
C
25
-2.5V
0.6
o
C
3
-55
6
o
C
-3.0V
0.8
4
-3.5V
FDC6318P Rev D (W)
8
I
D
1
= -1.5A
-4.5V
1.2
10
5