M27V512-200N6TR STMicroelectronics, M27V512-200N6TR Datasheet

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M27V512-200N6TR

Manufacturer Part Number
M27V512-200N6TR
Description
512 Kbit 64Kb x8 Low Voltage UV EPROM and OTP EPROM
Manufacturer
STMicroelectronics
Datasheet
DESCRIPTION
The M27V800 is a low voltage 8 Mbit EPROM of-
fered in the two ranges UV (ultra violet erase) and
OTP (one time programmable). It is ideally suited
for microprocessor systems requiring large data or
program storage. It is organised as either 1 Mbit
words of 8 bit or 512 Kbit words of 16 bit. The pin-
out is compatible with a 8 Mbit Mask ROM.
Table 1. Signal Names
September 1998
A0-A18
Q0-Q7
Q8-Q14
Q15A–1
E
G
BYTEV
V
V
LOW VOLTAGE READ OPERATION:
3V to 3.6V
FAST ACCESS TIME: 100ns
BYTE-WIDE or WORD-WIDE
CONFIGURABLE
8 Mbit MASK ROM REPLACEMENT
LOW POWER CONSUMPTION
– Active Current 30mA at 8MHz
– Standby Current 20 A
PROGRAMMING VOLTAGE: 12.5V
PROGRAMMING TIME: 100 s/byte (typical)
ELECTRONIC SIGNATURE
– Manufacturer Code: 0020h
– Device Code: 00B2h
CC
SS
PP
Address Inputs
Data Outputs
Data Outputs
Data Output / Address Input
Chip Enable
Output Enable
Byte Mode / Program Supply
Supply Voltage
Ground
Low Voltage UV EPROM and OTP EPROM
0.25V
Figure 1. Logic Diagram
8 Mbit (1Mb x8 or 512Kb x16)
42
BYTEV PP
A0-A18
44
FDIP42W (F)
1
SO44 (M)
1
G
E
19
V CC
V SS
M27V800
42
M27V800
1
PDIP42 (B)
PLCC44 (K)
15
Q15A–1
Q0-Q14
AI01851
1/16

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M27V512-200N6TR Summary of contents

Page 1

Low Voltage UV EPROM and OTP EPROM LOW VOLTAGE READ OPERATION 3.6V FAST ACCESS TIME: 100ns BYTE-WIDE or WORD-WIDE CONFIGURABLE 8 Mbit MASK ROM REPLACEMENT LOW POWER CONSUMPTION – Active Current 30mA at 8MHz – Standby Current 20 ...

Page 2

... These are stress ratings only and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating condi- tions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and other relevant qual- ity documents. ...

Page 3

... When the BYTEV PP ganisation is selected and the Q15A–1 pin is used for the Address Input A–1. When the memory is logically regarded as 16 bit wide, but read in the Byte-wide organisation, then with A– lower 8 bits of the 16 bit data are selected and with A– ...

Page 4

... OUT Two Line Output Control Because EPROMs are usually used in larger memory arrays, this product features a 2 line con- trol function which accommodates the use of mul- tiple memory connection. The two line control function allows: a. the lowest possible memory power dissipation, b ...

Page 5

... READ line from the system control bus. This ensures that all deselect- ed memory devices are in their low power standby mode and that the output pins are only active when data is required from a particular memory device ...

Page 6

M27V800 Table 8. Read Mode AC Characteristics ( 3.3V 10 Symbol Alt Parameter Address Valid AVQV ACC Output Valid BYTE High to Output t t BHQV ST ...

Page 7

Figure 6. Byte-Wide Read Mode AC Waveforms A–1,A0-A18 E G Q0-Q7 Note: BYTEV = V PP IL. Figure 7. BYTE Transition AC Waveforms A0-A18 A–1 tAVQV BYTEV PP Q0-Q7 tBLQX Q8-Q15 tBLQZ Note: Chip Enable (E) and Output Enable (G) ...

Page 8

M27V800 Table 9. Programming Mode DC Characteristics ( 6.25V 0.25V Symbol Parameter I Input Leakage Current LI I Supply Current CC I Program Current PP V Input Low Voltage IL V Input ...

Page 9

Figure 8. Programming and Verify Modes AC Waveforms A0-A18 Q0-Q15 BYTEV PP tVPHAV V CC tVCHAV E G Figure 9. Programming Flowchart 6.25V 12. Pulse NO NO ...

Page 10

... IL and byte 1 (A0=V ) the device identifier code. For IH the STMicroelectronics M27V800, these two iden- tifier bytes are given in Table 4 and can be read- out on outputs Q0 to Q7. Note that the M27V800 and M27C800 have the same identifier bytes. 10/16 ERASURE OPERATION (applies to UV EPROM) ...

Page 11

Table 11. Ordering Information Scheme Example: Device Type Speed -100 = 100 ns -120 = 120 ns -150 = 150 ns V Tolerance CC blank = 10 Package F = FDIP42W B = PDIP42 K = PLCC44 ...

Page 12

M27V800 Table 12. FDIP42W - 42 pin Ceramic Frit-seal DIP, with window, Package Mechanical Data Symb Typ 1. 54.41 D2 50.80 E 15.24 E1 14.50 e 2.54 eA 14.99 eB 16.18 L ...

Page 13

Table 13. PDIP42 - 42 pin Plastic DIP, 600 mils width, Package Mechanical Data Symb Typ 52.20 D2 50.80 E 15.24 E1 13.59 e1 2.54 eA 14.99 eB 15. Figure ...

Page 14

M27V800 Table 14. PLCC44 - 44 lead Plastic Leaded Chip Carrier, square, Package Mechanical Data Symb Typ 17.40 D1 16.51 D2 14.99 E 17.40 E1 16.51 E2 14. 0.89 N ...

Page 15

Table 15. SO44 - 44 lead Plastic Small Outline, 525 mils body width, Package Mechanical Data Symb Typ 28.10 E 13.20 e 1.27 H 15. Figure 13. SO44 - ...

Page 16

... No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in lif e support devices or systems without express written approval of STMicroelectronics ...

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