2SK3443_06 TOSHIBA [Toshiba Semiconductor], 2SK3443_06 Datasheet - Page 2

• Manufacturer Part Number: 2SK3443_06
• Description: Silicon N Channel MOS Type Switching Regulator, DC-DC Converter and Motor Drive Applications
• Manufacturer: TOSHIBA [Toshiba Semiconductor]

Electrical Characteristics
Source-Drain Diode Ratings and Characteristics
Marking
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Total gate charge (gate-source plus
gate-drain)
Gate-source charge
Gate-drain (“miller”) charge
Note 4: Connect the S1 and S2 pins together, and ground them except during switching time measurement.
Continuous drain reverse current
Pulse drain reverse current
Continuous drain reverse current
Pulse drain reverse current
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Note 5: I
Unless otherwise specified, connect the S1 and S2 pins together, and ground them.
Characteristics
indicator
I
DR
DR
Characteristics
Characteristics
1, I
2, I
K3443
DRP
DRP
Rise time
Turn-on time
Fall time
Turn-off time
1: Current flowing between the drain and the S2 pin. Ensure that the S1 pin is left open.
2: Current flowing between the drain and the S1 pin. Ensure that the S2 pin is left open.
(Note 1, Note 5)
(Note 1, Note 5)
(Note 1, Note 5)
(Note 1, Note 5)
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
(Note 4) (Ta = 25°C)
V
R
Symbol
(BR) DSS
DS (ON)
⎪Y
I
I
C
C
C
Q
Q
GSS
DSS
V
t
t
Q
oss
on
off
rss
t
t
iss
gs
gd
th
fs
r
f
Symbol
g
V
I
I
⎪
I
DRP
I
DRP
DR
DR
DS2F
Q
t
rr
rr
1
2
1
2
V
V
I
V
V
V
V
V
Duty < = 1%, t
V
D
GS
DS
DS
GS
DS
DS
DD
GS1
= 10 mA, V
10 V
I
I
dI
0 V
DR1
DR
= 150 V, V
= 10 V, I
= 10 V, I
= 10 V, V
= ±25 V, V
= 10 V, I
∼ − 120 V, V
DR
2
= 30 A, V
/dt = 100 A/μs
S
= 30 A, V
G
1
Test Condition
w
D
D
D
GS
GS
= 10 μs
Test Condition
GS
= 1 mA
= 15 A
DS
= 15 A
GS
= 0 V
GS
= 0 V, f = 1 MHz
I
D
GS
S
(Note 5) (Ta = 25°C)
= 0 V
= 0 V
= 10 V, I
2
= 15 A
⎯
⎯
⎯
⎯
= 0 V,
= 0 V
V
DD
D
R
∼ − 75 V
= 30 A
V
L
OUT
= 5.0 Ω
D
150
Min
Min
3.0
4.5
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
2030
1200
Typ.
Typ.
1.75
340
250
50
20
40
10
40
45
21
24
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
9
2006-11-20
2SK3443
−1.5
Max
Max
±10
100
120
5.0
55
⎯
⎯
⎯
⎯
⎯
30
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
1
4
Unit
Unit
mΩ
nC
μC
μA
μA
pF
ns
ns
V
V
S
A
A
A
A
V