2sk3443 TOSHIBA Semiconductor CORPORATION, 2sk3443 Datasheet

2sk3443

Manufacturer Part Number

2sk3443

Description

Toshiba Field Effect Transistor Silicon N Channel Mos Type

Manufacturer

TOSHIBA Semiconductor CORPORATION

Datasheet

1.2SK3443.pdf (6 pages)

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Switching Regulator, DC-DC Converter and

Motor Drive Applications

•

Absolute Maximum Ratings

Thermal Characteristics

Low drain-source ON resistance: R

High forward transfer admittance: ⎪Y

Low leakage current: I

Enhancementmode: V

Drain-source voltage

Drain-gate voltage (R

Gate-source voltage

Drain current

Drain power dissipation (Tc = 25°C)

Single pulse avalanche energy

Avalanche current

Repetitive avalanche energy (Note 3)

Channel temperature

Storage temperature range

Note:

Thermal resistance, channel to case

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2

Note 3: Repetitive rating: pulse width limited by maximum channel

This transistor is an electrostatic-sensitive device. Please handle with

caution.

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

temperature

Characteristics

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)

= 50 V, T

Pulse (Note 1)

= 20 kΩ)

DSS

= 3.0 to 5.0 V (V

= 25°C (initial), L = 773 μH, R

(Note 1)

(Note 2)

= 100 μA (V

DS (ON)

(Ta = 25°C)

Symbol

DGR

GSS

DSS

⎪ = 9 S (typ.)

stg

2SK3443

Symbol

th (ch-c)

= 150 V)

= 50 mΩ (typ.)

= 10 V, I

−55 to 150

Rating

12.5

150

±30

120

125

468

150

= 1 mA)

Max

1.00

= 25 Ω, I

Unit

°C

°C/W

Unit

= 30 A

Weight: 0.74 g (typ.)

Circuit Configuration

JEDEC

JEITA

TOSHIBA

Notice:

Please use the S1 pin for gate

input signal return. Make

sure that the main current

flows into the S2 pin.

2-9F1B

SC-97

2006-11-20

―

2SK3443

Unit: mm

Related parts for 2sk3443

2sk3443 Summary of contents

Page 1

... Symbol Max Unit R 1.00 °C/W th (ch- Ω 2SK3443 Unit: mm JEDEC ― JEITA SC-97 TOSHIBA 2-9F1B Weight: 0.74 g (typ.) Circuit Configuration Notice: Please use the S1 pin for gate input signal return. Make sure that the main current flows into the S2 pin. ...

Page 2

... ⎯ DRP = DS2F DR1 /dt = 100 A/μ 2SK3443 Min Typ. Max ⎯ ⎯ ±10 ⎯ ⎯ 100 ⎯ ⎯ 150 ⎯ 3.0 5.0 ⎯ ⎯ 4.5 9 ⎯ ⎯ 2030 ⎯ ⎯ ...

Page 3

... Drain-source voltage Gate-source voltage 0.01 0.001 100 2SK3443 I – ( – Common source Tc = 25°C Pulse test 7 ...

Page 4

... C rss 1 0 300 1000 −80 −40 Dynamic input/output characteristics 200 160 V DS 120 160 200 0 4 2SK3443 I – −0.6 −0.8 −1.0 −1.2 −1.4 −1.6 −1.8 −2.0 Drain-source voltage V ( – Common source ...

Page 5

... Pulse width t (S) w 500 400 300 200 100 Channel temperature (initial) Tch (° −15 V 300 Test circuit = 25 Ω 773 μ 2SK3443 – 100 125 150 B VDSS Wave form ⎛ ...

Page 6

... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2SK3443 20070701-EN 2006-11-20 ...

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