2SK3443_06 TOSHIBA [Toshiba Semiconductor], 2SK3443_06 Datasheet

2SK3443_06

Manufacturer Part Number

2SK3443_06

Description

Silicon N Channel MOS Type Switching Regulator, DC-DC Converter and Motor Drive Applications

Manufacturer

TOSHIBA [Toshiba Semiconductor]

Datasheet

1.2SK3443_06.pdf (6 pages)

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Switching Regulator, DC-DC Converter and

Motor Drive Applications

•

Absolute Maximum Ratings

Thermal Characteristics

Low drain-source ON resistance: R

High forward transfer admittance: ⎪Y

Low leakage current: I

Enhancementmode: V

Drain-source voltage

Drain-gate voltage (R

Gate-source voltage

Drain current

Drain power dissipation (Tc = 25°C)

Single pulse avalanche energy

Avalanche current

Repetitive avalanche energy (Note 3)

Channel temperature

Storage temperature range

Note:

Thermal resistance, channel to case

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2

Note 3: Repetitive rating: pulse width limited by maximum channel

This transistor is an electrostatic-sensitive device. Please handle with

caution.

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

temperature

Characteristics

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)

= 50 V, T

Pulse (Note 1)

= 20 kΩ)

DSS

= 3.0 to 5.0 V (V

= 25°C (initial), L = 773 μH, R

(Note 1)

(Note 2)

= 100 μA (V

DS (ON)

(Ta = 25°C)

Symbol

DGR

GSS

DSS

⎪ = 9 S (typ.)

stg

2SK3443

Symbol

th (ch-c)

= 150 V)

= 50 mΩ (typ.)

= 10 V, I

−55 to 150

Rating

12.5

150

±30

120

125

468

150

= 1 mA)

Max

1.00

= 25 Ω, I

Unit

°C

°C/W

Unit

= 30 A

Weight: 0.74 g (typ.)

Circuit Configuration

JEDEC

JEITA

TOSHIBA

Notice:

Please use the S1 pin for gate

input signal return. Make

sure that the main current

flows into the S2 pin.

2-9F1B

SC-97

2006-11-20

―

2SK3443

Unit: mm

Related parts for 2SK3443_06

2SK3443_06 Summary of contents

Page 1

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) Switching Regulator, DC-DC Converter and Motor Drive Applications • Low drain-source ON resistance: R • High forward transfer admittance: ⎪Y • Low leakage current 100 μA (V DSS ...

Page 2

Electrical Characteristics Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate ...

Page 3

I – Common source 25°C Pulse test Drain-source voltage V ( – ...

Page 4

R – (ON) 0.2 Common source 0. Pulse test 0.16 0.14 0. 0.1 0.08 0.06 0.04 0.02 0 −80 − ...

Page 5

Duty = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 Single pulse 0.01 0.00001 0.0001 Safe operating area 300 I D max (pulsed) * 100 100 μ operation 25°C 3 ...

Page 6

RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to ...

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