MCP98243-BE/MNY MICROCHIP [Microchip Technology], MCP98243-BE/MNY Datasheet - Page 4

• Manufacturer Part Number: MCP98243-BE/MNY
• Description: Memory Module Temperature Sensor w/ EEPROM for SPD
• Manufacturer: MICROCHIP [Microchip Technology]

MCP98243
INPUT/OUTPUT PIN DC CHARACTERISTICS (NOTE 1)
DS22153B-page 4
EEPROM DC CHARACTERISTICS
Electrical Specifications: Unless otherwise indicated, V
and T
Power Supply
Operating Voltage Range
Current, EEPROM write
Current, EEPROM read
Power On Reset (POR)
Write Cycle time (byte/page)
Endurance T
EEPROM Write Temperature
EEPROM Read Temperature
Write Protect Voltage
SWP and CWP Voltage
PWP Voltage
Note 1:
Electrical Specifications: Unless otherwise indicated, V
T
Serial Input/Output (SCL, SDA, A0, A1, A2) (Note 2)
Input
Output (SDA only)
Capacitance
SDA and SCL Inputs
Hysteresis
Spike Supression
Note 1:
A
= -20°C to +125°C.
High-level Voltage
Low-level Voltage
Input Current
Input Impedance (A0, A1, A2)
Input Impedance (A0, A1, A2)
Low-level Voltage
High-level Current (leakage)
Low-level Current
A
2:
3:
2:
= -20°C to +125°C.
Parameters
For V
sumes 80 µA (typical) until the sensor POR resets and acknowledges a shutdown command. See
Characterized but not production tested. For endurance estimates in a specific application, please consult the Total
Endurance™ Model which can be obtained from Microchip’s web site at www.microchip.com.
The range of voltage applied at A0 pin for Permanent Write Protect is GND to V
Section 5.3.3 “Write Protection”.
These specifications apply for the Temperature Sensor and EEPROM.
For V
biased and consumes 80 µA (typical) until the sensor POR resets and acknowledges a shutdown
command. See
A
Parameters
= +25°C
DD
DD
ranges of 1.8V to the temperature sensor V
ranges of 1.8V to the temperature sensor V
Figure
2-15.
V
EE
EE
I
I
POR_EE
Sym
DD_EE
DD_EE
V
V
t
WRITE
WC
—
READ
DD
HV
V
Sym
V
T
C
V
Z
Z
I
HYST
V
I
I
OH
OL
IN
SP
OL
IN
IN
IH
IL
IN
Min
-40
1.8
—
—
—
—
—
—
0
7
0.7V
1100
Typ
V
100
Min
1.6
1M
—
—
—
—
—
—
—
—
—
—
—
—
—
—
3
DD
6
DD
DD
POR_TS
DD
= 1.8V to 5.5V, GND = Ground,
= 1.8V to 5.5V, GND = Ground and
2000
0.05V
Max
500
125
0.1V
5.5
—
—
85
12
—
POR_TS
5
, the temperature sensor becomes partially biased and con-
Typ
200
—
—
—
—
—
—
—
1
5
DD
DD
cycles Number of Write Cycles, V
, the temperature sensor becomes partially
Unit
ms
µA
µA
°C
°C
V
V
V
V
0.3V
Max
0.4
—
±5
—
—
—
—
—
—
50
1
DD
Sensor in Shutdown Mode (for t
(Note 1)
Sensor in Shutdown Mode (Note 1)
EEPROM
Applied at A0 pin (Note 3)
Units
DD
MΩ
mA
µA
kΩ
µA
pF
ns
V
V
V
V
V
+ 1V. See
© 2009 Microchip Technology Inc.
SDA and SCL only
V
V
I
V
V
V
V
OL
IN
IN
OH
OL
DD
DD
Conditions
= 3 mA
> V
< V
= 0.6V
= V
> 2V
< 2V
Figure 2-13
IH
IL
DD
Conditions
Figure
DD
= 5V (Note 2)
2-15.
and
WC
),