MCP98243-BE/MNY MICROCHIP [Microchip Technology], MCP98243-BE/MNY Datasheet - Page 3

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MCP98243-BE/MNY

Manufacturer Part Number
MCP98243-BE/MNY
Description
Memory Module Temperature Sensor w/ EEPROM for SPD
Manufacturer
MICROCHIP [Microchip Technology]
Datasheet
1.0
Absolute Maximum Ratings †
V
Voltage at all Input/Output pins ............... GND – 0.3V to 6.0V
Pin A0 ................................................... GND – 0.3V to 12.5V
Storage temperature .....................................-65°C to +150°C
Ambient temp. with power applied ................-40°C to +125°C
Junction Temperature (T
ESD protection on all pins (HBM:MM) ................. (4 kV:300V)
Latch-Up Current at each pin (25°C) ....................... ±200 mA
© 2009 Microchip Technology Inc.
TEMPERATURE SENSOR DC CHARACTERISTICS
Electrical Specifications: Unless otherwise indicated, V
and T
Temperature Sensor Accuracy
Temperature Conversion Time
Power Supply
Specified Voltage Range
Operating Voltage Range
Operating Current
Shutdown Current
Power On Reset (POR)
Power Supply Rejection,
Event Output (Open-Drain output, external pull-up or pull-down resistor required), see Section 5.2.3
High-level Current (leakage)
Low-level Voltage
Low-level Current (leakage)
High-level Voltage
Thermal Response, from +25°C (Air) to +125°C (oil bath)
DFN/UDFN/TDFN-8
TSSOP-8
Note 1:
DD
.................................................................................. 6.0V
+75°C < T
+40°C < T
-20°C < T
T
0.25°C/bit
T
A
A
A
= -20°C to +125°C.
= -40°C
= +25°C
ELECTRICAL
CHARACTERISTICS
Parameters
Characterized but not production tested. Also, see Section 2.0 “Typical Performance Curves”.
A
A
A
≤ +125°C
≤ +125°C
≤ +95°C
J
) .......................................... +150°C
Δ°C/ΔV
V
I
t
I
POR_TS
DD_TS
T
Sym
CONV
SHDN
V
t
V
V
V
I
I
RES
ACY
OH
OL
OH
DD
DD
OL
DD
Min
-1.0
-2.0
-3.0
3.0
2.7
±0.15
±0.2
±0.5
±0.3
Typ
200
2.2
0.7
1.4
±1
65
-1
1
DD
V
DD
+1.0
+2.0
+3.0
Max
125
500
3.6
5.5
0.4
= 3.0V to 3.6V, GND = Ground,
3
1
1
-0.5
†Notice: Stresses above those listed under “Maximum
ratings” may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operational listings of this specification is not implied.
Exposure to maximum rating conditions for extended periods
may affect device reliability.
°C/V V
Unit
ms
µA
µA
µA
µA
°C
°C
°C
°C
°C
V
V
V
V
V
s
s
JC42.4 - TSE2002B3
Grade B Accuracy Specification
15 s/sec (typical) (See Section 5.2.4)
JC42.4 Specified Voltage Range
Note 1
EEPROM Inactive
EEPROM Inactive, I
Threshold for falling V
V
V
I
V
Resistor)
I
Resistor)
Time to 63% (89°C)
OL
OH
DD
DD
OH
OL
= 3 mA (Active-Low, Pull-up Resistor)
= 3 mA (Active-High, Pull-down
= V
= 2.7V to 5.5V
= 3.3V+150 mV
= V
SS
DD
(Active-High, Pull-down
(Active-Low, Pull-up Resistor)
MCP98243
Conditions
2
PP AC
C Bus Inactive
DD
voltage
DS22153B-page 3
(0 to 1 MHz)

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