ADF4208 AD [Analog Devices], ADF4208 Datasheet - Page 4

• Manufacturer Part Number: ADF4208
• Description: Dual RF PLL Frequency Synthesizers
• Manufacturer: AD [Analog Devices]

ADF4206/ADF4207/ADF4208
ABSOLUTE MAXIMUM RATINGS
(T
V
V
V
V
Digital I/O Voltage to GND . . . . . . –0.3 V to DV
Analog I/O Voltage to GND . . . . . . . . . –0.3 V to V
OSC
RF
Operating Temperature Range
Storage Temperature Range . . . . . . . . . . . . –65°C to +150°C
Maximum Junction Temperature . . . . . . . . . . . . . . . . 150°C
TSSOP θ
Model
ADF4206BRU
ADF4207BRU
ADF4208BRU
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection. Although
the ADF4206/ADF4207/ADF4208 features proprietary ESD protection circuitry, permanent
damage may occur on devices subjected to high-energy electrostatic discharges. Therefore, proper
ESD precautions are recommended to avoid performance degradation or loss of functionality.
TIMING CHARACTERISTICS
Parameter
t
t
t
t
t
t
NOTES
Guaranteed by design but not production tested.
Specification subject to change without notice.
1
2
3
4
5
6
Contact the factory for chip availability.
DD
DD
P
P
A
RF2
Industrial (B Version) . . . . . . . . . . . . . . . . –40°C to +85°C
1, V
1, V
IN
= 25°C unless otherwise noted.)
1 to GND
1 to V
IN
A to RF
IN
P
P
, OSC
2 to GND . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +7 V
2 to V
(A, B) to GND . . . . . . . . . . . . –0.3 V to V
JA
DD
Thermal Impedance . . . . . . . . . . . . . 150.4°C/W
IN
2 . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +0.3 V
OUT
DD
3
B (RF1, RF2) . . . . . . . . . . . . . . . . . . ± 320 mV
1 . . . . . . . . . . . . . . . . . . . . –0.3 V to +5.5 V
, RF1
. . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +7 V
CLOCK
Limit at
T
(B Version)
10
10
25
25
10
20
DATA
MIN
LE
LE
IN
Temperature Range
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
to T
(A, B),
DB21 (MSB)
MAX
1, 2
Unit
ns min
ns min
ns min
ns min
ns min
ns min
(V
AGND
t
1
DD
1 = V
DB20
RF2
= DGND
DD
t
2
2 = 3 V
DD
DD
P
ORDERING GUIDE
+ 0.3 V
+ 0.3 V
+ 0.3 V
RF2
Package Description
Thin Shrink Small Outline Package (TSSOP)
Thin Shrink Small Outline Package (TSSOP)
Thin Shrink Small Outline Package (TSSOP)
Test Conditions/Comments
DATA to CLOCK Setup Time
DATA to CLOCK Hold Time
CLOCK High Duration
CLOCK Low Duration
CLOCK to LE Setup Time
LE Pulsewidth
= 0 V; T
10%, 5 V
DB2
t
3
A
= T
CSP θ
CSP θ
Lead Temperature, Soldering
NOTES
1
2
3
TRANSISTOR COUNT
11749 (CMOS) and 522 (Bipolar).
Stresses above those listed under Absolute Maximum Ratings may cause perma-
This device is a high-performance RF integrated circuit with an ESD rating of
GND = AGND = DGND = 0 V.
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those listed in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
< 2 kV and it is ESD sensitive. Proper precautions should be taken for handling
and assembly.
Vapor Phase (60 sec) . . . . . . . . . . . . . . . . . . . . . . . . 215°C
Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 220°C
MIN
t
10%; V
4
(CONTROL BIT C2)
to T
JA
JA
(Paddle Soldered) . . . . . . . . . . . . . . . . . . . 122°C/W
(Paddle Not Soldered) . . . . . . . . . . . . . . . . 216°C/W
MAX
DB1
DD
unless otherwise noted, dBm referred to 50
1, V
DD
2 ≤ V
P
1, V
(CONTROL BIT C1)
P
2 ≤ 6.0 V; AGND
DB0 (LSB)
t
WARNING!
5
t
6
RF1
Package Option
RU-16
RU-16
RU-20
ESD SENSITIVE DEVICE
= DGND
RF1
.)
=